All MOSFET. LCS50P03 Datasheet

 

LCS50P03 Datasheet and Replacement


   Type Designator: LCS50P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 43.2 nS
   Cossⓘ - Output Capacitance: 91.7 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOT23
 

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LCS50P03 Datasheet (PDF)

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LCS50P03

LCS50P03 P-Channel 30V Trench MOSFETGeneral Description The LCS50P03 is the P-Channel logic enhancement mode power field effect transistors. These devices are BVDSS=-30V , particularly suited for low voltage application such as RDS(ON) 50m@VGS=-10V cellular phone and notebook computer power management and other battery powered circuits where RDS(ON)

Datasheet: S80N10R , S80N10S , CMD5941 , CMU5941 , MMBF4860 , N6006NZ , STP180N4F6 , TK10P50W , IRLZ44N , HCCW120R040H1 , HCCZ120R040H1 , VS2622AA , VS2622AD , VS2622AL , VS3510DS , VS3602GPMT , VS3603GPMT .

History: SWB13N65K2 | BL10N80-A

Keywords - LCS50P03 MOSFET datasheet

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