LCS50P03 Datasheet and Replacement
Type Designator: LCS50P03
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 43.2 nS
Cossⓘ - Output Capacitance: 91.7 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: SOT23
LCS50P03 substitution
LCS50P03 Datasheet (PDF)
lcs50p03.pdf

LCS50P03 P-Channel 30V Trench MOSFETGeneral Description The LCS50P03 is the P-Channel logic enhancement mode power field effect transistors. These devices are BVDSS=-30V , particularly suited for low voltage application such as RDS(ON) 50m@VGS=-10V cellular phone and notebook computer power management and other battery powered circuits where RDS(ON)
Datasheet: S80N10R , S80N10S , CMD5941 , CMU5941 , MMBF4860 , N6006NZ , STP180N4F6 , TK10P50W , AON7506 , HCCW120R040H1 , HCCZ120R040H1 , VS2622AA , VS2622AD , VS2622AL , VS3510DS , VS3602GPMT , VS3603GPMT .
History: BUZ32H3045A
Keywords - LCS50P03 MOSFET datasheet
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History: BUZ32H3045A



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