LCS50P03 Specs and Replacement
Type Designator: LCS50P03
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 43.2 nS
Cossⓘ - Output Capacitance: 91.7 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: SOT23
LCS50P03 substitution
- MOSFET ⓘ Cross-Reference Search
LCS50P03 datasheet
lcs50p03.pdf
LCS50P03 P-Channel 30V Trench MOSFET General Description The LCS50P03 is the P-Channel logic enhancement mode power field effect transistors. These devices are BVDSS=-30V , particularly suited for low voltage application such as RDS(ON) 50m @VGS=-10V cellular phone and notebook computer power management and other battery powered circuits where RDS(ON)... See More ⇒
Detailed specifications: S80N10R, S80N10S, CMD5941, CMU5941, MMBF4860, N6006NZ, STP180N4F6, TK10P50W, AON6380, HCCW120R040H1, HCCZ120R040H1, VS2622AA, VS2622AD, VS2622AL, VS3510DS, VS3602GPMT, VS3603GPMT
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