HCCW120R040H1 Specs and Replacement
Type Designator: HCCW120R040H1
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 259 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 55 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 150 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm
Package: TO247
HCCW120R040H1 substitution
- MOSFET ⓘ Cross-Reference Search
HCCW120R040H1 datasheet
hccw120r040h1.pdf
HCCW120R040H1 1200V/55A N-Channel Advanced Power MOSFET V DS 1200 V Features R DS(on),TYP@ VGS=20 V 42 m SiC MOSFET technology I D(Silicon limited) 55 A High blocking voltage with low on-resistance High-speed switching with low capacitances TO-247 Very low switching losses Low reverse recovery (Qrr) 100% Avalanche tested,100% Rg tested Part ID Package Typ... See More ⇒
hccw120r080h1.pdf
HCCW120R080H1 1200V/80m N-Channel SIC Power MOSFET Features V 1200 V DS High speed switching with low on-resistance R 80 m DS(on),TYP@25 Very low switching losses I 36 A D Controllable dv/dt Avalanche Ruggedness and 100% Avalanche test TO-247 Robust body diode 1 2 3 D Part ID Package Type Marking Packing HCCW120R080H1 TO-247 120R080H1 30pcs/Pipe G... See More ⇒
Detailed specifications: S80N10S, CMD5941, CMU5941, MMBF4860, N6006NZ, STP180N4F6, TK10P50W, LCS50P03, IRF530, HCCZ120R040H1, VS2622AA, VS2622AD, VS2622AL, VS3510DS, VS3602GPMT, VS3603GPMT, VS3604AT
Keywords - HCCW120R040H1 MOSFET specs
HCCW120R040H1 cross reference
HCCW120R040H1 equivalent finder
HCCW120R040H1 pdf lookup
HCCW120R040H1 substitution
HCCW120R040H1 replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
