All MOSFET. VS2622AL Datasheet

 

VS2622AL MOSFET. Datasheet pdf. Equivalent


   Type Designator: VS2622AL
   Marking Code: VS15
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 18 nC
   trⓘ - Rise Time: 4600 nS
   Cossⓘ - Output Capacitance: 195 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: SOT23-3L

 VS2622AL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VS2622AL Datasheet (PDF)

 ..1. Size:1024K  cn vgsemi
 vs2622al.pdf

VS2622AL VS2622AL

VS2622AL20V/8A N-Channel Advanced Power MOSFETV DS 20 VFeaturesR DS(on),TYP@ VGS=10 V 11 m N-Channel2.5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 12 m Enhancement modeR DS(on),TYP@ VGS=2.5 V 14 m Low on-resistance RDS(on) @ VGS=2.5 VI D 8 A Fast Switching and High efficiencySOT23-3L Pb-free lead plating; RoHS compliantPart ID Package Type

 7.1. Size:693K  cn vanguard
 vs2622ae.pdf

VS2622AL VS2622AL

VS2622AE 20V/56A N-Channel Advanced Power MOSFET V DS 20 V Features R DS(on),TYP@ VGS=10V 4.8 m N-Channel2.5V logic level control R DS(on),TYP@ VGS=4.5V 5.6 m Enhancement mode I D 56 A Low on-resistance RDS(on) @ VGS=2.5 V PDFN3333 Fast Switching and High efficiency Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Ma

 7.2. Size:964K  cn vgsemi
 vs2622aa.pdf

VS2622AL VS2622AL

VS2622AA20V/13A N-Channel Advanced Power MOSFETV DS 20 VFeaturesR DS(on),TYP@ VGS=4.5 V 8.2 m N-Channel2.5V Logic Level ControlR DS(on),TYP@ VGS=2.5 V 10 m Enhancement modeI D 13 A Low on-resistance RDS(on) @ VGS=2.5 V Fast SwitchingDFN2x2x0.75-6L Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS2622AA DFN2x2x0.75-6L 2

 7.3. Size:1032K  cn vgsemi
 vs2622ae.pdf

VS2622AL VS2622AL

VS2622AE20V/56A N-Channel Advanced Power MOSFETV DS 20 VFeaturesR DS(on),TYP@ VGS=10V 4.8 m N-Channel2.5V logic level controlR DS(on),TYP@ VGS=4.5V 5.6 m Enhancement modeI D 56 A Low on-resistance RDS(on) @ VGS=2.5 VPDFN3333 Fast Switching and High efficiency Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS2622AE PDFN

 7.4. Size:978K  cn vgsemi
 vs2622ad.pdf

VS2622AL VS2622AL

VS2622AD20V/60A N-Channel Advanced Power MOSFETV DS 20 VFeaturesR DS(on),TYP@ VGS=4.5 V 6.5 m Enhancement modeR DS(on),TYP@ VGS=2.5 V 8.5 m Low on-resistance RDS(on) @ VGS=2.5 VI D 60 A Fast Switching and High efficiencyTO-252 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS2622AD TO-252 2622AD 2500pc

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: HY1710P

 

 
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