VS3510DS Specs and Replacement
Type Designator: VS3510DS
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 300 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: SOP8
VS3510DS substitution
- MOSFET ⓘ Cross-Reference Search
VS3510DS datasheet
vs3510ds.pdf
VS3510DS -30V/-10A Dual P-Channel Advanced Power MOSFET Features V DS -30 V R DS(on),TYP@ VGS=-10 V 13 m Dual P-Channel, -5V Logic Level Control R DS(on),TYP@ VGS=-4.5 V 19 m Enhancement mode I D -10 A Low on-resistance RDS(on) @ VGS=-4.5 V Fast Switching and High efficiency SOP8 100% Avalanche Tested Pb-free lead plating; RoHS compliant Part ID Packa... See More ⇒
vs3518ae.pdf
VS3518AE -30V/-35A P-Channel Advanced Power MOSFET V DS -30 V Features R DS(on),TYP@ VGS=-10 V 15 m P-Channel -5V Logic Level Control R DS(on),TYP@ VGS=-4.5V 23 m Low on-resistance RDS(on) @ VGS=-4.5 V I D -35 A Fast Switching and High efficiency PDFN3333 Enhancement mode Pb-free lead plating; RoHS compliant Part ID Package Type Marking Ta... See More ⇒
Detailed specifications: STP180N4F6, TK10P50W, LCS50P03, HCCW120R040H1, HCCZ120R040H1, VS2622AA, VS2622AD, VS2622AL, IRFP450, VS3602GPMT, VS3603GPMT, VS3604AT, VS3604DM, VS3604DT, VS3605ABT, VS3606AD, VS3606AE
Keywords - VS3510DS MOSFET specs
VS3510DS cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
