All MOSFET. VS3510DS Datasheet

 

VS3510DS Datasheet and Replacement


   Type Designator: VS3510DS
   Marking Code: 3510DS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 35 nC
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: SOP8
 

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VS3510DS Datasheet (PDF)

 ..1. Size:1080K  cn vgsemi
 vs3510ds.pdf pdf_icon

VS3510DS

VS3510DS-30V/-10A Dual P-Channel Advanced Power MOSFETFeaturesV DS -30 VR DS(on),TYP@ VGS=-10 V 13 m Dual P-Channel, -5V Logic Level ControlR DS(on),TYP@ VGS=-4.5 V 19 m Enhancement modeI D -10 A Low on-resistance RDS(on) @ VGS=-4.5 V Fast Switching and High efficiencySOP8 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Packa

 9.1. Size:662K  cn vanguard
 vs3518ae.pdf pdf_icon

VS3510DS

VS3518AE -30V/-35A P-Channel Advanced Power MOSFET V DS -30 V Features R DS(on),TYP@ VGS=-10 V 15 m P-Channel-5V Logic Level Control R DS(on),TYP@ VGS=-4.5V 23 m Low on-resistance RDS(on) @ VGS=-4.5 V I D -35 A Fast Switching and High efficiency PDFN3333 Enhancement mode Pb-free lead plating; RoHS compliant Part ID Package Type Marking Ta

Datasheet: STP180N4F6 , TK10P50W , LCS50P03 , HCCW120R040H1 , HCCZ120R040H1 , VS2622AA , VS2622AD , VS2622AL , IRF1407 , VS3602GPMT , VS3603GPMT , VS3604AT , VS3604DM , VS3604DT , VS3605ABT , VS3606AD , VS3606AE .

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