VS3625GEMC Specs and Replacement

Type Designator: VS3625GEMC

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0087 Ohm

Package: PDFN3333

VS3625GEMC substitution

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VS3625GEMC datasheet

 ..1. Size:842K  cn vgsemi
 vs3625gemc.pdf pdf_icon

VS3625GEMC

VS3625GEMC 30V/30A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 6.7 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 11 m VitoMOS Technology I D(Silicon Limited) 60 A Fast Switching and High efficiency I D(Package Limited) 30 A 100% Avalanche Tested,100% Rg Tested PDFN3333 Part ID Package Type Marking Packing VS3625GEMC PDFN3333 3... See More ⇒

 7.1. Size:971K  cn vgsemi
 vs3625gpmc.pdf pdf_icon

VS3625GEMC

VS3625GPMC 30V/30A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10V 7.6 m Enhancement mode R DS(on),TYP@ VGS=4.5V 12 m VitoMOS Technology I D(Silicon Limited) 42 A Fast Switching and High efficiency I D(Package Limited) 30 A 100% Avalanche Tested PDFN5x6 Part ID Package Type Marking Packing VS3625GPMC PDFN5x6 3625GP 3000pcs/Reel ... See More ⇒

 8.1. Size:1216K  cn vgsemi
 vs3625dp2-g.pdf pdf_icon

VS3625GEMC

VS3625DP2-G 30V Dual Asymmetric N-Channel Advanced Power MOSFET V DS 30 30 V Features R DS(on),TYP@ VGS=10 V 4.6 1.6 m Dual Asymmetric N-Channel R DS(on),TYP@ VGS=4.5V 7.4 2.4 m Very low on-resistance I D(Silicon Limited) 50 100 A VitoMOS Technology I D(Package Limited) 45 60 A 100% Avalanche Tested,100% Rg Tested PDFN5x6 Dual Opt2 Part ID Package Type M... See More ⇒

 8.2. Size:1043K  cn vgsemi
 vs3625db.pdf pdf_icon

VS3625GEMC

VS3625DB 30V Dual Asymmetric N-Channel Advanced Power MOSFET V DS 30 30 V Features R DS(on),TYP@ VGS=10 V 6.6 4.5 m Dual Asymmetric N-Channel R DS(on),TYP@ VGS=4.5V 10 7 m VitoMOS Technology I D(Wire bond Limited) 24 36 A 100% Avalanche Tested,100% Rg Tested DFN3x3 Part ID Package Type Marking Packing VS3625DB DFN3x3 3625DB 5000pcs/Reel Maximum ratings, at T... See More ⇒

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Detailed specifications: VS3622AA2, VS3622AA4, VS3622AD, VS3622AP, VS3622AS, VS3622DB, VS3625DB, VS3625DP2-G, AOD4184A, VS3625GPMC, VS3628DB, VS3628GA, VS3628GE, VS3628GP, VS3633GA, VS3633GE, VS3638GA

Keywords - VS3625GEMC MOSFET specs

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