VS3645GE
MOSFET. Datasheet pdf. Equivalent
Type Designator: VS3645GE
Marking Code: 3645GE
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 13
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4
V
|Id|ⓘ - Maximum Drain Current: 22
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 7
nC
trⓘ - Rise Time: 34
nS
Cossⓘ -
Output Capacitance: 170
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0175
Ohm
Package:
PDFN3333
VS3645GE
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VS3645GE
Datasheet (PDF)
..1. Size:1117K cn vgsemi
vs3645ge.pdf 
VS3645GE30V/16A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 13.5 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 23 m VitoMOS TechnologyI D(Silicon Limited) 22 A Fast Switching and High efficiencyI D(Package Limited) 16 A 100% Avalanche Tested,100% Rg TestedPDFN3333Part ID Package Type Marking PackingVS3645GE PDFN3333
7.1. Size:979K cn vgsemi
vs3645ga.pdf
VS3645GA30V/10A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 15 mR DS(on),TYP@ VGS=4.5 V 23 m Enhancement mode VitoMOS Technology I D 10 A Low Gate ChargeDFN2x2x0.75-6LPart ID Package Type Marking PackingVS3645GA DFN2x2x0.75-6L 3645 3000PCS/ReelMaximum ratings, at TA =25C, unless otherwise specifiedSymbol Parameter Ratin
8.1. Size:1068K cn vgsemi
vs3645de-g.pdf
VS3645DE-G30V/12A Dual N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10V 14 m Dual N-ChannelR DS(on),TYP@ VGS=4.5V 22 m Enhancement modeI D(Silicon Limited) 20 A VitoMOS TechnologyI D(Package Limited) 12 A Fast Switching and High efficiencyPDFN3333 Dual 100% Avalanche Tested,100% Rg TestedPart ID Package Type Marking Pac
9.1. Size:493K cn vanguard
vs3640ds.pdf
VS3640DS 30V/9A Dual N-Channel Advanced Power MOSFET Features V DS 30 V R DS(on),TYP@ VGS=10 V 16 m Dual N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 24 m Enhancement mode I D 9 A Fast Switching High Effective SOP8 Pb-free lead plating; RoHS compliant; Halogen-Free Tape and reel Part ID Package Type Marking information VS
9.2. Size:959K cn vgsemi
vs3640aa.pdf
VS3640AA30V/10A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 14 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 20 m Fast Switching and High efficiencyI D 10 A Pb-free lead plating; RoHS compliantDFN2x2x0.75-6LPart ID Package Type Marking PackingVS3640AA DFN2x2x0.75-6L 3640 3000PCS/ReelMaximum ratings, at TA =25C, unless otherwise s
9.3. Size:1121K cn vgsemi
vs3646acm.pdf
VS3646ACM30V/5A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10V 20 m Enhancement modeR DS(on),TYP@ VGS=4.5V 32 mI D(Silicon limited) 5 ASOT23Part ID Package Type Marking PackingVS3646ACM SOT23 VS37 3000pcs/ReelMaximum ratings, at T A=25 C, unless otherwise specifiedSymbol Parameter Rating UnitV(BR)DSS Drain-Source breakdown voltage 30 V
9.4. Size:989K cn vgsemi
vs3640ad.pdf
VS3640AD30V/28A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 16 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 24 m Enhancement modeI D 28 A Low on-resistance RDS(on) @ VGS=4.5 VTO-252 Fast Switching 100% Avalanche test Pb-free lead plating; RoHS compliantTape and reelPart ID Package Type Markinginfor
9.5. Size:1209K cn vgsemi
vs3640ac.pdf
VS3640AC30V/6A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 19 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 27 m Enhancement modeI D 6 A Low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingSOT23 Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3640AC SOT23 VS03 3000pcs/reelMaximu
9.6. Size:1011K cn vgsemi
vs3640db.pdf
VS3640DB30V Dual Asymmetric N-Channel Advanced Power MOSFETFeaturesV DS 30 VR DS(on),TYP@ VGS=10 V 14 m Dual N-ChannelR DS(on),TYP@ VGS=4.5 V 22 m High Current CapabilityI D 25 A Low on-resistance RDS(on) @ VGS=4.5 V Low Gate ChargeDFN3x3 Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3640DB DFN3x3 3640DB 5000pcs/Reel
9.7. Size:1082K cn vgsemi
vs3647db.pdf
VS3647DB30V Dual Asymmetric N-Channel Advanced Power MOSFETV DS 30 30 VFeaturesR DS(on),TYP@ VGS=10 V 8.2 4.9 m Dual Asymmetric N-ChannelR DS(on),TYP@ VGS=4.5V 12 7.7 m VitoMOS TechnologyI D(Wire bond Limited) 24 36 A 100% Avalanche Tested,100% Rg TestedDFN3x3Part ID Package Type Marking PackingVS3647DB DFN3x3 3647DB 5000pcs/ReelMaximum ratings, at
9.8. Size:1034K cn vgsemi
vs3640de.pdf
VS3640DE30V/24A Dual N-Channel Advanced Power MOSFETFeaturesV DS 30 VR DS(on),TYP@ VGS=10 V 15 m Dual N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 24 m Enhancement modeI D 24 A Low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingPDFN3333 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Marking Pa
9.9. Size:1170K cn vgsemi
vs3646acl.pdf
VS3646ACL30V/4.6A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=4.5V 22 m Enhancement modeR DS(on),TYP@ VGS=2.5V 26 mI D(Silicon limited) 4.6 ASOT23Part ID Package Type Marking PackingVS3646ACL SOT23 VS38 3000pcs/ReelMaximum ratings, at T A=25 C, unless otherwise specifiedSymbol Parameter Rating UnitV(BR)DSS Drain-source breakdown voltage
9.10. Size:1200K cn vgsemi
vs3640bc.pdf
VS3640BC30V/5A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=4.5 V 29 m N-Channel2.5V Logic Level ControlR DS(on),TYP@ VGS=2.5 V 36 m Enhancement modeI D 5 A Low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingSOT23 Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3640BC SOT23 VS06 3000pcs/reelMax
9.11. Size:1069K cn vgsemi
vs3640at.pdf
VS3640AT30V/30A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 15 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 22 m Very low on-resistance RDS(on) @ VGS=4.5 VI D 30 A Fast SwitchingTO-220AB High conversion efficiency Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3640AT TO-220AB 3640AT 50pcs/TubeM
9.12. Size:1050K cn vgsemi
vs3640ds.pdf
VS3640DS30V/9A Dual N-Channel Advanced Power MOSFETFeaturesV DS 30 VR DS(on),TYP@ VGS=10 V 16 m Dual N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 24 m Enhancement modeI D 9 A Fast Switching High EffectiveSOP8 Pb-free lead plating; RoHS compliant; Halogen-FreePart ID Package Type Marking PackingVS3640DS SOP8 3640DS 3000pcs/reelMaxim
9.13. Size:1182K cn vgsemi
vs3640dp.pdf
VS3640DP30V/30A Dual N-Channel Advanced Power MOSFETFeaturesV DS 30 VR DS(on),TYP@ VGS=10 V 14 m Dual N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 22 m Enhancement modeI D 30 A Low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingPDFN5x6 Dual 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Markin
9.14. Size:1110K cn vgsemi
vs3640dp3.pdf
VS3640DP330V/30A Dual N-Channel Advanced Power MOSFETFeaturesV DS 30 VR DS(on),TYP@ VGS=10 V 14 m Dual N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 22 m Enhancement modeI D 30 A Low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingPDFN5x6 Dual 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Marki
9.15. Size:1020K cn vgsemi
vs3640ae.pdf
VS3640AE30V/25A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 13.5 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 23 m Fast Switching and High efficiencyI D(Silicon Limited) 25 A 100% Avalanche testPDFN3333Part ID Package Type Marking PackingVS3640AE PDFN3333 3640AE 5000PCS/ReelMaximum ratings, at TA =25C, unless otherwise specified
9.16. Size:1004K cn vgsemi
vs3640as.pdf
VS3640AS30V/11A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 14 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 22 m Enhancement modeI D 11 A Low on-resistance RDS(on) @ VGS=4.5 V 100% Avalanche testSOP8 Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3640AS SOP8 3640AS 3000PCS/Reel
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.
