VS3652DB Specs and Replacement

Type Designator: VS3652DB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 10 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 48 nS

Cossⓘ - Output Capacitance: 315 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: DFN3X3

VS3652DB substitution

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VS3652DB datasheet

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 vs3652db.pdf pdf_icon

VS3652DB

VS3652DB 30V Dual Asymmetric N-Channel Advanced Power MOSFET V DS 30 30 V Features R DS(on),TYP@ VGS=10 V 8.2 6.5 m Dual Asymmetric N-Channel R DS(on),TYP@ VGS=4.5V 12 11 m VitoMOS Technology I D(Wire bond Limited) 24 30 A 100% Avalanche Tested,100% Rg Tested DFN3x3 Part ID Package Type Marking Packing VS3652DB DFN3x3 3652DB 5000pcs/Reel Maximum ratings, at ... See More ⇒

Detailed specifications: VS3640AS, VS3640AT, VS3640BC, VS3645GA, VS3645GE, VS3646ACL, VS3646ACM, VS3647DB, AO3400, VS3662DB, VS3698AD, VS3698AE, VS3698AP, VS3698AT, VS3803GPMT, VS3817GA, VS3817GPMT

Keywords - VS3652DB MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.