All MOSFET. VS3652DB Datasheet

 

VS3652DB Datasheet and Replacement


   Type Designator: VS3652DB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 10 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 48 nS
   Cossⓘ - Output Capacitance: 315 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: DFN3X3
 

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VS3652DB Datasheet (PDF)

 ..1. Size:1070K  cn vgsemi
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VS3652DB

VS3652DB30V Dual Asymmetric N-Channel Advanced Power MOSFETV DS 30 30 VFeaturesR DS(on),TYP@ VGS=10 V 8.2 6.5 m Dual Asymmetric N-ChannelR DS(on),TYP@ VGS=4.5V 12 11 m VitoMOS TechnologyI D(Wire bond Limited) 24 30 A 100% Avalanche Tested,100% Rg TestedDFN3x3Part ID Package Type Marking PackingVS3652DB DFN3x3 3652DB 5000pcs/ReelMaximum ratings, at

Datasheet: VS3640AS , VS3640AT , VS3640BC , VS3645GA , VS3645GE , VS3646ACL , VS3646ACM , VS3647DB , IRF3710 , VS3662DB , VS3698AD , VS3698AE , VS3698AP , VS3698AT , VS3803GPMT , VS3817GA , VS3817GPMT .

History: HMS4260 | QM3208S | SPB02N60S5 | NCEA2309 | GSM3456S | NCEP020N85T | SDF1NA60JAB

Keywords - VS3652DB MOSFET datasheet

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