All MOSFET. VS3652DB Datasheet

 

VS3652DB MOSFET. Datasheet pdf. Equivalent


   Type Designator: VS3652DB
   Marking Code: 3652DB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 10 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 24 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.5 nC
   trⓘ - Rise Time: 48 nS
   Cossⓘ - Output Capacitance: 315 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: DFN3X3

 VS3652DB Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VS3652DB Datasheet (PDF)

 ..1. Size:1070K  cn vgsemi
 vs3652db.pdf

VS3652DB VS3652DB

VS3652DB30V Dual Asymmetric N-Channel Advanced Power MOSFETV DS 30 30 VFeaturesR DS(on),TYP@ VGS=10 V 8.2 6.5 m Dual Asymmetric N-ChannelR DS(on),TYP@ VGS=4.5V 12 11 m VitoMOS TechnologyI D(Wire bond Limited) 24 30 A 100% Avalanche Tested,100% Rg TestedDFN3x3Part ID Package Type Marking PackingVS3652DB DFN3x3 3652DB 5000pcs/ReelMaximum ratings, at

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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