All MOSFET. VS3698AD Datasheet

 

VS3698AD Datasheet and Replacement


   Type Designator: VS3698AD
   Marking Code: 3698AD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 59 nC
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 355 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
   Package: TO252
 
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VS3698AD Datasheet (PDF)

 ..1. Size:875K  cn vgsemi
 vs3698ad.pdf pdf_icon

VS3698AD

VS3698AD30V/80A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 2.9 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 4.5 m Low RDS(on) to minimize conduction lossesI D(Wire bond Limited) 80 A 100% Avalanche TestedTO-252Part ID Package Type Marking PackingVS3698AD TO-252 3698AD 2500pcs/ReelMaximum ratings, at T A=25 C, unless otherwise s

 7.1. Size:1237K  cn vgsemi
 vs3698ap.pdf pdf_icon

VS3698AD

VS3698AP30V/105A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 3.1 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 4.5 m Enhancement modeI D 105 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingPDFN5x6 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Marking Packing

 7.2. Size:1055K  cn vgsemi
 vs3698at.pdf pdf_icon

VS3698AD

VS3698AT30V/110A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 3.5 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 4.7 m Very low on-resistance RDS(on) @ VGS=4.5 VI D 110 A Fast Switching and High efficiencyTO-220AB 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3698AT TO-220AB 3

 7.3. Size:1231K  cn vgsemi
 vs3698ae.pdf pdf_icon

VS3698AD

VS3698AE30V/76A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 3.0 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 4.4 m Very low on-resistanceI D 76 A Fast Switching 100% Avalanche TestedPDFN3333 100% 1x reflow implemented in semiconductor assembly processPart ID Package Type Marking PackingVS3698AE PDFN3333 3698AE 5000PCS/Reel

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