VS3803GPMT Specs and Replacement

Type Designator: VS3803GPMT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 176 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 97 nS

Cossⓘ - Output Capacitance: 4035 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.001 Ohm

Package: PDFN5X6

VS3803GPMT substitution

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VS3803GPMT datasheet

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VS3803GPMT

VS3803GPMT 30V/176A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10V 0.8 m Enhancement mode R DS(on),TYP@ VGS=4.5V 1.3 m VitoMOS Technolog I D(Silicon limited) 176 A Ultra Low RDS(on) to minimize conduction losses PDFN5x6 100% Avalanche Tested,100% Rg Tested Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching losses Par... See More ⇒

Detailed specifications: VS3646ACM, VS3647DB, VS3652DB, VS3662DB, VS3698AD, VS3698AE, VS3698AP, VS3698AT, 2N7000, VS3817GA, VS3817GPMT, VS3820GA2, VS3825GPMC, VS40200AD, VS40200AP, VS40200ATD, VS4401AKH

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