VSA030C03LD Specs and Replacement

Type Designator: VSA030C03LD

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm

Package: DFN2X3-8L

VSA030C03LD substitution

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VSA030C03LD datasheet

 ..1. Size:1341K  cn vgsemi
 vsa030c03ld.pdf pdf_icon

VSA030C03LD

VSA030C03LD 30V N+P Channel Advanced Power MOSFET V DS 30 -30 V Features R DS(on),TYP@ VGS= 4.5 V 33 60 m N+P Channel R DS(on),TYP@ VGS= 2.5V 40 77 m Enhancement mode I D 6 -4.7 A Low on-resistance RDS(on) @ VGS= 2.5 V DFN2x3-8L Fast Switching and High efficiency High Power and Current Handing Capability Pb-free lead plating; RoHS compliant Part ID... See More ⇒

 5.1. Size:1352K  cn vgsemi
 vsa030c03md.pdf pdf_icon

VSA030C03LD

VSA030C03MD 30V N+P Channel Advanced Power MOSFET V DS 30 -30 V Features R DS(on),TYP@ VGS= 10 V 21 52 m N+P Channel R DS(on),TYP@ VGS= 4.5V 28 61 m Enhancement mode I D 8 -5 A Low on-resistance RDS(on) @ VGS= 4.5 V DFN2x3-8L Fast Switching and High efficiency High Power and Current Handing Capability Pb-free lead plating; RoHS compliant Part ID Pa... See More ⇒

Detailed specifications: VS4698AP, VS4698DP, VS4802GKM, VS4802GMM, VS4802GPHT, VS4802GPMT, VS6614DS, VS6614DS-K, IRF520, VSA030C03MD, VSD003N04MS-G, VSD005N03MS, VSD007N04MS-G, VSD020C04MC, VSE002N03MS-G, VSE003N04MSC-G, VSE003N04MS-G

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