All MOSFET. VSA030C03LD Datasheet

 

VSA030C03LD MOSFET. Datasheet pdf. Equivalent


   Type Designator: VSA030C03LD
   Marking Code: 030C03
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.2 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: DFN2X3-8L

 VSA030C03LD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VSA030C03LD Datasheet (PDF)

 ..1. Size:1341K  cn vgsemi
 vsa030c03ld.pdf

VSA030C03LD VSA030C03LD

VSA030C03LD30V N+P Channel Advanced Power MOSFETV DS 30 -30 VFeaturesR DS(on),TYP@ VGS=4.5 V 33 60 m N+P ChannelR DS(on),TYP@ VGS=2.5V 40 77 m Enhancement modeI D 6 -4.7 A Low on-resistance RDS(on) @ VGS=2.5 VDFN2x3-8L Fast Switching and High efficiency High Power and Current Handing Capability Pb-free lead plating; RoHS compliantPart ID

 5.1. Size:1352K  cn vgsemi
 vsa030c03md.pdf

VSA030C03LD VSA030C03LD

VSA030C03MD30V N+P Channel Advanced Power MOSFETV DS 30 -30 VFeaturesR DS(on),TYP@ VGS=10 V 21 52 m N+P ChannelR DS(on),TYP@ VGS=4.5V 28 61 m Enhancement modeI D 8 -5 A Low on-resistance RDS(on) @ VGS=4.5 VDFN2x3-8L Fast Switching and High efficiency High Power and Current Handing Capability Pb-free lead plating; RoHS compliantPart ID Pa

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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