All MOSFET. VSD003N04MS-G Datasheet

 

VSD003N04MS-G Datasheet and Replacement


   Type Designator: VSD003N04MS-G
   Marking Code: 003N04M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 115 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id| ⓘ - Maximum Drain Current: 58 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 41 nC
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 800 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO252
 

 VSD003N04MS-G substitution

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VSD003N04MS-G Datasheet (PDF)

 ..1. Size:1017K  cn vgsemi
vsd003n04ms-g.pdf pdf_icon

VSD003N04MS-G

VSD003N04MS-G40V/58A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 3 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 4.1 m Low RDS(on) to minimize conduction lossesI D(Wire bond Limited) 58 A VitoMOS Technology 100% Avalanche Tested,100% Rg TestedTO-252 Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching lossesPart I

 9.1. Size:1027K  cn vanguard
vsd007n06ms.pdf pdf_icon

VSD003N04MS-G

VSD007N06MS 60V/85A N-Channel Advanced Power MOSFET V DS 60 V Features R DS(on),TYP@ VGS=10 V 5.0 m N-Channel R DS(on),TYP@ VGS=4.5V 6.0 m Enhancement mode I D 85 A Very low on-resistance RDS(on) @ VGS=4.5 V TO-252 Fast Switching 100% Avalanche test Pb-free lead plating; RoHS compliant Part ID Package Type Marking Tape and reel informat

 9.2. Size:284K  cn vanguard
vsd004n03ms.pdf pdf_icon

VSD003N04MS-G

VSD004N03MS 30V/150A N-Channel Advanced Power MOSFET V DS 30 VFeatures R DS(on),TYP@ VGS=10 V 2.2 m N-Channel R DS(on),TYP@ VGS=4.5V 2.8 m Enhancement mode I D 150 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching TO-252 100% Avalanche Tested Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking infor

 9.3. Size:1056K  cn vgsemi
vsd005n03ms.pdf pdf_icon

VSD003N04MS-G

VSD005N03MS30V/105A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 3 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 4.4 m Enhancement modeI D 105 A Very low on-resistance RDS(on) @ VGS=4.5 VTO-252 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVSD005N03MS TO-252 005

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: VS4603GPHT

Keywords - VSD003N04MS-G MOSFET datasheet

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