VSD020C04MC Specs and Replacement
Type Designator: VSD020C04MC
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 56 nS
Cossⓘ - Output Capacitance: 85 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: TO252-4L
VSD020C04MC substitution
- MOSFET ⓘ Cross-Reference Search
VSD020C04MC datasheet
vsd020c04mc.pdf
VSD020C04MC 40V N+P Channel Advanced Power MOSFET V DS 40 -40 V Features R DS(on),TYP@ VGS= 10 V 12 30 m N+P Channel R DS(on),TYP@ VGS= 4.5V 18 50 m Enhancement mode I D 40 -25 A Very low on-resistance Fast Switching and High efficiency TO-252-4L 100% Avalanche Tested Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VSD020C... See More ⇒
Detailed specifications: VS4802GPMT, VS6614DS, VS6614DS-K, VSA030C03LD, VSA030C03MD, VSD003N04MS-G, VSD005N03MS, VSD007N04MS-G, 8N60, VSE002N03MS-G, VSE003N04MSC-G, VSE003N04MS-G, VSE004N04MS, VSE005N03MS, VSE006N03MSC-G, VSE007N04MS-G, VSE008N03LS
Keywords - VSD020C04MC MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: NCE60NF080
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