All MOSFET. VSD020C04MC Datasheet

 

VSD020C04MC MOSFET. Datasheet pdf. Equivalent


   Type Designator: VSD020C04MC
   Marking Code: 020C04MC
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 22 nC
   trⓘ - Rise Time: 56 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: TO252-4L

 VSD020C04MC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VSD020C04MC Datasheet (PDF)

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 vsd020c04mc.pdf

VSD020C04MC VSD020C04MC

VSD020C04MC40V N+P Channel Advanced Power MOSFETV DS 40 -40 VFeaturesR DS(on),TYP@ VGS=10 V 12 30 m N+P ChannelR DS(on),TYP@ VGS=4.5V 18 50 m Enhancement modeI D 40 -25 A Very low on-resistance Fast Switching and High efficiencyTO-252-4L 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVSD020C

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NCE6012CS

 

 
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