VSD020C04MC Specs and Replacement

Type Designator: VSD020C04MC

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 56 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: TO252-4L

VSD020C04MC substitution

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VSD020C04MC datasheet

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VSD020C04MC

VSD020C04MC 40V N+P Channel Advanced Power MOSFET V DS 40 -40 V Features R DS(on),TYP@ VGS= 10 V 12 30 m N+P Channel R DS(on),TYP@ VGS= 4.5V 18 50 m Enhancement mode I D 40 -25 A Very low on-resistance Fast Switching and High efficiency TO-252-4L 100% Avalanche Tested Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VSD020C... See More ⇒

Detailed specifications: VS4802GPMT, VS6614DS, VS6614DS-K, VSA030C03LD, VSA030C03MD, VSD003N04MS-G, VSD005N03MS, VSD007N04MS-G, 8N60, VSE002N03MS-G, VSE003N04MSC-G, VSE003N04MS-G, VSE004N04MS, VSE005N03MS, VSE006N03MSC-G, VSE007N04MS-G, VSE008N03LS

Keywords - VSD020C04MC MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.