All MOSFET. VSD020C04MC Datasheet

 

VSD020C04MC Datasheet and Replacement


   Type Designator: VSD020C04MC
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 56 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: TO252-4L
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VSD020C04MC Datasheet (PDF)

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VSD020C04MC

VSD020C04MC40V N+P Channel Advanced Power MOSFETV DS 40 -40 VFeaturesR DS(on),TYP@ VGS=10 V 12 30 m N+P ChannelR DS(on),TYP@ VGS=4.5V 18 50 m Enhancement modeI D 40 -25 A Very low on-resistance Fast Switching and High efficiencyTO-252-4L 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVSD020C

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IPI072N10N3G | BUK454-200B | STD4NK60ZT4 | CS7316 | AP30N30W | 2SK2845 | IRF1010ELPBF

Keywords - VSD020C04MC MOSFET datasheet

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