All MOSFET. VSD020C04MC Datasheet

 

VSD020C04MC Datasheet and Replacement


   Type Designator: VSD020C04MC
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 56 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: TO252-4L
 

 VSD020C04MC substitution

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VSD020C04MC Datasheet (PDF)

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VSD020C04MC

VSD020C04MC40V N+P Channel Advanced Power MOSFETV DS 40 -40 VFeaturesR DS(on),TYP@ VGS=10 V 12 30 m N+P ChannelR DS(on),TYP@ VGS=4.5V 18 50 m Enhancement modeI D 40 -25 A Very low on-resistance Fast Switching and High efficiencyTO-252-4L 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVSD020C

Datasheet: VS4802GPMT , VS6614DS , VS6614DS-K , VSA030C03LD , VSA030C03MD , VSD003N04MS-G , VSD005N03MS , VSD007N04MS-G , K2611 , VSE002N03MS-G , VSE003N04MSC-G , VSE003N04MS-G , VSE004N04MS , VSE005N03MS , VSE006N03MSC-G , VSE007N04MS-G , VSE008N03LS .

Keywords - VSD020C04MC MOSFET datasheet

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