VSE044C03MD Specs and Replacement

Type Designator: VSE044C03MD

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 29 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 56 nS

Cossⓘ - Output Capacitance: 125 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: PDFN3333

VSE044C03MD substitution

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VSE044C03MD datasheet

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VSE044C03MD

VSE044C03MD 30V N+P Channel Advanced Power MOSFET V DS 30 -30 V Features R DS(on),TYP@ VGS= 10 V 10 24 m N+P Channel R DS(on),TYP@ VGS= 4.5V 14 38 m Enhancement mode I D(Wire bond Limited) 12 -12 A 100% Avalanche Tested,100% Rg Tested PDFN3333 Dual Part ID Package Type Marking Packing VSE044C03MD PDFN3333 Dual 044C03M 5000pcs/Reel Maximum ratings, at TA =25 C, ... See More ⇒

Detailed specifications: VSE003N04MSC-G, VSE003N04MS-G, VSE004N04MS, VSE005N03MS, VSE006N03MSC-G, VSE007N04MS-G, VSE008N03LS, VSE008NE2LS, IRF830, VSE2R5N03MS, VSO007N04MS-G, VSP002N03MS, VSP002N03MS-G, VSP002N03MST-G, VSP003N04HS-G, VSP003N04MS-G, VSP003N04MST-G

Keywords - VSE044C03MD MOSFET specs

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