All MOSFET. VSE044C03MD Datasheet

 

VSE044C03MD Datasheet and Replacement


   Type Designator: VSE044C03MD
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 56 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: PDFN3333
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VSE044C03MD Datasheet (PDF)

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VSE044C03MD

VSE044C03MD30V N+P Channel Advanced Power MOSFETV DS 30 -30 VFeaturesR DS(on),TYP@ VGS=10 V 10 24 m N+P ChannelR DS(on),TYP@ VGS=4.5V 14 38 m Enhancement modeI D(Wire bond Limited) 12 -12 A 100% Avalanche Tested,100% Rg TestedPDFN3333 DualPart ID Package Type Marking PackingVSE044C03MD PDFN3333 Dual 044C03M 5000pcs/ReelMaximum ratings, at TA =25C,

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: HGN650N15S | FRX130D2 | STL9P2UH7 | IPB80N08S2L-07 | AONR21305C | LSF80R980GT | FCD3400N80Z

Keywords - VSE044C03MD MOSFET datasheet

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