All MOSFET. VSE2R5N03MS Datasheet

 

VSE2R5N03MS Datasheet and Replacement


   Type Designator: VSE2R5N03MS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 48 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 71 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: PDFN3333
 

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VSE2R5N03MS Datasheet (PDF)

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VSE2R5N03MS

VSE2R5N03MS30V/48A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 2.7 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 4.1 m Low RDS(on) to minimize conduction lossesI D(Wire bond Limited) 48 A 100% Avalanche Tested,100% Rg TestedPDFN3333Part ID Package Type Marking PackingVSE2R5N03MS PDFN3333 2R5N03M 5000PCS/ReelMaximum ratings, at TA =

Datasheet: VSE003N04MS-G , VSE004N04MS , VSE005N03MS , VSE006N03MSC-G , VSE007N04MS-G , VSE008N03LS , VSE008NE2LS , VSE044C03MD , IRLB3034 , VSO007N04MS-G , VSP002N03MS , VSP002N03MS-G , VSP002N03MST-G , VSP003N04HS-G , VSP003N04MS-G , VSP003N04MST-G , VSP005N03MS .

History: WMM028N10HG2

Keywords - VSE2R5N03MS MOSFET datasheet

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