VSE2R5N03MS Specs and Replacement

Type Designator: VSE2R5N03MS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 48 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 71 nS

Cossⓘ - Output Capacitance: 450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm

Package: PDFN3333

VSE2R5N03MS substitution

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VSE2R5N03MS datasheet

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 vse2r5n03ms.pdf pdf_icon

VSE2R5N03MS

VSE2R5N03MS 30V/48A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 2.7 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 4.1 m Low RDS(on) to minimize conduction losses I D(Wire bond Limited) 48 A 100% Avalanche Tested,100% Rg Tested PDFN3333 Part ID Package Type Marking Packing VSE2R5N03MS PDFN3333 2R5N03M 5000PCS/Reel Maximum ratings, at TA =... See More ⇒

Detailed specifications: VSE003N04MS-G, VSE004N04MS, VSE005N03MS, VSE006N03MSC-G, VSE007N04MS-G, VSE008N03LS, VSE008NE2LS, VSE044C03MD, IRLB3034, VSO007N04MS-G, VSP002N03MS, VSP002N03MS-G, VSP002N03MST-G, VSP003N04HS-G, VSP003N04MS-G, VSP003N04MST-G, VSP005N03MS

Keywords - VSE2R5N03MS MOSFET specs

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