VSE2R5N03MS Datasheet and Replacement
Type Designator: VSE2R5N03MS
Marking Code: 2R5N03M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
|Id| ⓘ - Maximum Drain Current: 48 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 68 nC
tr ⓘ - Rise Time: 71 nS
Cossⓘ - Output Capacitance: 450 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: PDFN3333
VSE2R5N03MS substitution
VSE2R5N03MS Datasheet (PDF)
..1. Size:992K cn vgsemi
vse2r5n03ms.pdf
vse2r5n03ms.pdf
VSE2R5N03MS30V/48A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 2.7 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 4.1 m Low RDS(on) to minimize conduction lossesI D(Wire bond Limited) 48 A 100% Avalanche Tested,100% Rg TestedPDFN3333Part ID Package Type Marking PackingVSE2R5N03MS PDFN3333 2R5N03M 5000PCS/ReelMaximum ratings, at TA =
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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