VSP040C04MD MOSFET. Datasheet pdf. Equivalent
Type Designator: VSP040C04MD
Marking Code: 040C04MD
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 18 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 9.5 nC
trⓘ - Rise Time: 5.4 nS
Cossⓘ - Output Capacitance: 65 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
Package: PDFN5X6
VSP040C04MD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VSP040C04MD Datasheet (PDF)
..1. Size:1438K cn vgsemi
vsp040c04md.pdf
vsp040c04md.pdf
VSP040C04MD40V N+P Channel Advanced Power MOSFETV DS 40 -40 VFeaturesR DS(on),TYP@ VGS=10 V 26 28 m N+P ChannelR DS(on),TYP@ VGS=4.5V 40 43 m Enhancement modeI D 20 -22 A Low on-resistance RDS(on) @ VGS=4.5 V Fast Switching and High efficiencyPDFN5x6 Dual Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVSP040C04MD PD
Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , P55NF06 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .
