VSP040C04MD Datasheet. Specs and Replacement
Type Designator: VSP040C04MD 📄📄
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 18 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.4 nS
Cossⓘ - Output Capacitance: 65 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
Package: PDFN5X6
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VSP040C04MD substitution
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VSP040C04MD datasheet
vsp040c04md.pdf
VSP040C04MD 40V N+P Channel Advanced Power MOSFET V DS 40 -40 V Features R DS(on),TYP@ VGS= 10 V 26 28 m N+P Channel R DS(on),TYP@ VGS= 4.5V 40 43 m Enhancement mode I D 20 -22 A Low on-resistance RDS(on) @ VGS= 4.5 V Fast Switching and High efficiency PDFN5x6 Dual Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VSP040C04MD PD... See More ⇒
Detailed specifications: VSP002N03MS-G, VSP002N03MST-G, VSP003N04HS-G, VSP003N04MS-G, VSP003N04MST-G, VSP005N03MS, VSP007N04MS-G, VSP008C03MD, IRFP064N, VSP0R8N04HS-G, VSP1R1N04HS-G, VSP1R4N04HS-G, JCS740VC, JCS740RC, JCS740SC, JCS740BC, JCS740CC
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