VSP0R8N04HS-G PDF and Equivalents Search

 

VSP0R8N04HS-G Specs and Replacement

Type Designator: VSP0R8N04HS-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 66 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 200 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 112 nS

Cossⓘ - Output Capacitance: 2535 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00095 Ohm

Package: PDFN5X6

VSP0R8N04HS-G substitution

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VSP0R8N04HS-G datasheet

 ..1. Size:1036K  cn vgsemi
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VSP0R8N04HS-G

VSP0R8N04HS-G 40V/200A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10V 0.76 m Enhancement mode I D(Package Limited) 200 A Ultra low on-resistance VitoMOS Technology 100% Avalanche Tested,100% Rg Tested PDFN5x6 Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching losses Part ID Package Type Marking Packing VSP0R8N04HS-G PDF... See More ⇒

Detailed specifications: VSP002N03MST-G , VSP003N04HS-G , VSP003N04MS-G , VSP003N04MST-G , VSP005N03MS , VSP007N04MS-G , VSP008C03MD , VSP040C04MD , AO4468 , VSP1R1N04HS-G , VSP1R4N04HS-G , JCS740VC , JCS740RC , JCS740SC , JCS740BC , JCS740CC , JCS740FC .

Keywords - VSP0R8N04HS-G MOSFET specs

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