VSP0R8N04HS-G Specs and Replacement
Type Designator: VSP0R8N04HS-G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 66 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 200 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 112 nS
Cossⓘ - Output Capacitance: 2535 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00095 Ohm
Package: PDFN5X6
VSP0R8N04HS-G substitution
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VSP0R8N04HS-G datasheet
vsp0r8n04hs-g.pdf
VSP0R8N04HS-G 40V/200A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10V 0.76 m Enhancement mode I D(Package Limited) 200 A Ultra low on-resistance VitoMOS Technology 100% Avalanche Tested,100% Rg Tested PDFN5x6 Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching losses Part ID Package Type Marking Packing VSP0R8N04HS-G PDF... See More ⇒
Detailed specifications: VSP002N03MST-G , VSP003N04HS-G , VSP003N04MS-G , VSP003N04MST-G , VSP005N03MS , VSP007N04MS-G , VSP008C03MD , VSP040C04MD , AO4468 , VSP1R1N04HS-G , VSP1R4N04HS-G , JCS740VC , JCS740RC , JCS740SC , JCS740BC , JCS740CC , JCS740FC .
Keywords - VSP0R8N04HS-G MOSFET specs
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VSP0R8N04HS-G replacement
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