VSP0R8N04HS-G MOSFET. Datasheet pdf. Equivalent
Type Designator: VSP0R8N04HS-G
Marking Code: 0R8N04H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 66 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.4 V
|Id|ⓘ - Maximum Drain Current: 200 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 85 nC
trⓘ - Rise Time: 112 nS
Cossⓘ - Output Capacitance: 2535 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00095 Ohm
Package: PDFN5X6
VSP0R8N04HS-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VSP0R8N04HS-G Datasheet (PDF)
..1. Size:1036K cn vgsemi
vsp0r8n04hs-g.pdf
vsp0r8n04hs-g.pdf
VSP0R8N04HS-G40V/200A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 0.76 m Enhancement modeI D(Package Limited) 200 A Ultra low on-resistance VitoMOS Technology 100% Avalanche Tested,100% Rg TestedPDFN5x6 Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching lossesPart ID Package Type Marking PackingVSP0R8N04HS-G PDF
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
