All MOSFET. VSP0R8N04HS-G Datasheet

 

VSP0R8N04HS-G MOSFET. Datasheet pdf. Equivalent


   Type Designator: VSP0R8N04HS-G
   Marking Code: 0R8N04H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 66 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.4 V
   |Id|ⓘ - Maximum Drain Current: 200 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 85 nC
   trⓘ - Rise Time: 112 nS
   Cossⓘ - Output Capacitance: 2535 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00095 Ohm
   Package: PDFN5X6

 VSP0R8N04HS-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VSP0R8N04HS-G Datasheet (PDF)

 ..1. Size:1036K  cn vgsemi
 vsp0r8n04hs-g.pdf

VSP0R8N04HS-G VSP0R8N04HS-G

VSP0R8N04HS-G40V/200A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 0.76 m Enhancement modeI D(Package Limited) 200 A Ultra low on-resistance VitoMOS Technology 100% Avalanche Tested,100% Rg TestedPDFN5x6 Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching lossesPart ID Package Type Marking PackingVSP0R8N04HS-G PDF

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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