All MOSFET. VSP0R8N04HS-G Datasheet

 

VSP0R8N04HS-G Datasheet and Replacement


   Type Designator: VSP0R8N04HS-G
   Marking Code: 0R8N04H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 66 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.4 V
   |Id| ⓘ - Maximum Drain Current: 200 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 85 nC
   tr ⓘ - Rise Time: 112 nS
   Cossⓘ - Output Capacitance: 2535 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00095 Ohm
   Package: PDFN5X6
 

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VSP0R8N04HS-G Datasheet (PDF)

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VSP0R8N04HS-G

VSP0R8N04HS-G40V/200A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 0.76 m Enhancement modeI D(Package Limited) 200 A Ultra low on-resistance VitoMOS Technology 100% Avalanche Tested,100% Rg TestedPDFN5x6 Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching lossesPart ID Package Type Marking PackingVSP0R8N04HS-G PDF

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

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