All MOSFET. VSP1R1N04HS-G Datasheet

 

VSP1R1N04HS-G Datasheet and Replacement


   Type Designator: VSP1R1N04HS-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 98 nS
   Cossⓘ - Output Capacitance: 2055 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm
   Package: PDFN5060X
 

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VSP1R1N04HS-G Datasheet (PDF)

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 vsp1r1n04hs-g.pdf pdf_icon

VSP1R1N04HS-G

VSP1R1N04HS-G40V/60A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 1.2 m Enhancement modeI D(Package Limited) 60 A Very low on-resistance VitoMOS Technology 100% Avalanche Tested,100% Rg TestedPDFN5060X Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching lossesPart ID Package Type Marking PackingVSP1R1N04HS-G PDFN5

 9.1. Size:1043K  cn vgsemi
 vsp1r4n04hs-g.pdf pdf_icon

VSP1R1N04HS-G

VSP1R4N04HS-G40V/60A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 1.4 m Enhancement modeI D(Package Limited) 60 A Low RDS(on) to minimize conduction losses VitoMOS TechnologyPDFN5060X 100% Avalanche Tested,100% Rg Tested Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching lossesPart ID Package Type Marking Packing

Datasheet: VSP003N04HS-G , VSP003N04MS-G , VSP003N04MST-G , VSP005N03MS , VSP007N04MS-G , VSP008C03MD , VSP040C04MD , VSP0R8N04HS-G , BS170 , VSP1R4N04HS-G , JCS740VC , JCS740RC , JCS740SC , JCS740BC , JCS740CC , JCS740FC , FTP11N08A .

History: SI4622DY | VBZL80N03

Keywords - VSP1R1N04HS-G MOSFET datasheet

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 VSP1R1N04HS-G equivalent finder
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 VSP1R1N04HS-G replacement

 

 
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