VSP1R1N04HS-G Specs and Replacement

Type Designator: VSP1R1N04HS-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 98 nS

Cossⓘ - Output Capacitance: 2055 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm

Package: PDFN5060X

VSP1R1N04HS-G substitution

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VSP1R1N04HS-G datasheet

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 vsp1r1n04hs-g.pdf pdf_icon

VSP1R1N04HS-G

VSP1R1N04HS-G 40V/60A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10V 1.2 m Enhancement mode I D(Package Limited) 60 A Very low on-resistance VitoMOS Technology 100% Avalanche Tested,100% Rg Tested PDFN5060X Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching losses Part ID Package Type Marking Packing VSP1R1N04HS-G PDFN5... See More ⇒

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 vsp1r4n04hs-g.pdf pdf_icon

VSP1R1N04HS-G

VSP1R4N04HS-G 40V/60A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10V 1.4 m Enhancement mode I D(Package Limited) 60 A Low RDS(on) to minimize conduction losses VitoMOS Technology PDFN5060X 100% Avalanche Tested,100% Rg Tested Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching losses Part ID Package Type Marking Packing ... See More ⇒

Detailed specifications: VSP003N04HS-G, VSP003N04MS-G, VSP003N04MST-G, VSP005N03MS, VSP007N04MS-G, VSP008C03MD, VSP040C04MD, VSP0R8N04HS-G, IRF730, VSP1R4N04HS-G, JCS740VC, JCS740RC, JCS740SC, JCS740BC, JCS740CC, JCS740FC, FTP11N08A

Keywords - VSP1R1N04HS-G MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.