All MOSFET. VSP1R1N04HS-G Datasheet

 

VSP1R1N04HS-G MOSFET. Datasheet pdf. Equivalent


   Type Designator: VSP1R1N04HS-G
   Marking Code: 1R1N04H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.4 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 71 nC
   trⓘ - Rise Time: 98 nS
   Cossⓘ - Output Capacitance: 2055 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm
   Package: PDFN5060X

 VSP1R1N04HS-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VSP1R1N04HS-G Datasheet (PDF)

 ..1. Size:1404K  cn vgsemi
 vsp1r1n04hs-g.pdf

VSP1R1N04HS-G VSP1R1N04HS-G

VSP1R1N04HS-G40V/60A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 1.2 m Enhancement modeI D(Package Limited) 60 A Very low on-resistance VitoMOS Technology 100% Avalanche Tested,100% Rg TestedPDFN5060X Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching lossesPart ID Package Type Marking PackingVSP1R1N04HS-G PDFN5

 9.1. Size:1043K  cn vgsemi
 vsp1r4n04hs-g.pdf

VSP1R1N04HS-G VSP1R1N04HS-G

VSP1R4N04HS-G40V/60A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 1.4 m Enhancement modeI D(Package Limited) 60 A Low RDS(on) to minimize conduction losses VitoMOS TechnologyPDFN5060X 100% Avalanche Tested,100% Rg Tested Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching lossesPart ID Package Type Marking Packing

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: SL3139T | IRFAE40 | IRFU3709 | MDP6N60TH | ME110N10F

 

 
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