VSP1R4N04HS-G Specs and Replacement
Type Designator: VSP1R4N04HS-G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 43 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 84 nS
Cossⓘ - Output Capacitance: 1600 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
Package: PDFN5060X
VSP1R4N04HS-G substitution
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VSP1R4N04HS-G datasheet
vsp1r4n04hs-g.pdf
VSP1R4N04HS-G 40V/60A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10V 1.4 m Enhancement mode I D(Package Limited) 60 A Low RDS(on) to minimize conduction losses VitoMOS Technology PDFN5060X 100% Avalanche Tested,100% Rg Tested Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching losses Part ID Package Type Marking Packing ... See More ⇒
vsp1r1n04hs-g.pdf
VSP1R1N04HS-G 40V/60A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10V 1.2 m Enhancement mode I D(Package Limited) 60 A Very low on-resistance VitoMOS Technology 100% Avalanche Tested,100% Rg Tested PDFN5060X Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching losses Part ID Package Type Marking Packing VSP1R1N04HS-G PDFN5... See More ⇒
Detailed specifications: VSP003N04MS-G , VSP003N04MST-G , VSP005N03MS , VSP007N04MS-G , VSP008C03MD , VSP040C04MD , VSP0R8N04HS-G , VSP1R1N04HS-G , IRFZ44N , JCS740VC , JCS740RC , JCS740SC , JCS740BC , JCS740CC , JCS740FC , FTP11N08A , JY09M .
Keywords - VSP1R4N04HS-G MOSFET specs
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VSP1R4N04HS-G replacement
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