ME100N03T Specs and Replacement

Type Designator: ME100N03T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 178 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 172 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19.7 nS

Cossⓘ - Output Capacitance: 831 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: TO220

ME100N03T substitution

- MOSFET ⓘ Cross-Reference Search

 

ME100N03T datasheet

 ..1. Size:1112K  matsuki electric
 me100n03t me100n03t-g.pdf pdf_icon

ME100N03T

ME100N03T /ME100N03T-G N- Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME100N03T-G is the N-Channel logic enhancement mode RDS(ON) 3m @VGS=10V power field effect transistors are produced using high cell density, Super high density cell design for extremely low RDS(ON) DMOS trench technology. This high density process is especially Exceptional on-resistance... See More ⇒

Detailed specifications: JCS740VC, JCS740RC, JCS740SC, JCS740BC, JCS740CC, JCS740FC, FTP11N08A, JY09M, IRFZ44, ME100N03T-G, ME120N04T, ME1302AT3, ME1302AT3-G, ME1303AT3, ME1303AT3-G, ME13N10A, ME13N10A-G

Keywords - ME100N03T MOSFET specs

 ME100N03T cross reference

 ME100N03T equivalent finder

 ME100N03T pdf lookup

 ME100N03T substitution

 ME100N03T replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs