ME100N03T MOSFET. Datasheet pdf. Equivalent
Type Designator: ME100N03T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 178 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 172 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 135 nC
Rise Time (tr): 19.7 nS
Drain-Source Capacitance (Cd): 831 pF
Maximum Drain-Source On-State Resistance (Rds): 0.003 Ohm
Package: TO220
ME100N03T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME100N03T Datasheet (PDF)
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me100n03t me100n03t-g.pdf
me100n03t me100n03t-g.pdf
ME100N03T /ME100N03T-G N- Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME100N03T-G is the N-Channel logic enhancement mode RDS(ON)3m@VGS=10V power field effect transistors are produced using high cell density, Super high density cell design for extremely low RDS(ON) DMOS trench technology. This high density process is especially Exceptional on-resistance
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
