All MOSFET. ME100N03T Datasheet

 

ME100N03T MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME100N03T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 178 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 172 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 135 nC
   trⓘ - Rise Time: 19.7 nS
   Cossⓘ - Output Capacitance: 831 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: TO220

 ME100N03T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME100N03T Datasheet (PDF)

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 me100n03t me100n03t-g.pdf

ME100N03T ME100N03T

ME100N03T /ME100N03T-G N- Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME100N03T-G is the N-Channel logic enhancement mode RDS(ON)3m@VGS=10V power field effect transistors are produced using high cell density, Super high density cell design for extremely low RDS(ON) DMOS trench technology. This high density process is especially Exceptional on-resistance

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