ME100N03T-G Specs and Replacement

Type Designator: ME100N03T-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 178 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 172 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19.7 nS

Cossⓘ - Output Capacitance: 831 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: TO220

ME100N03T-G substitution

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ME100N03T-G datasheet

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ME100N03T-G

ME100N03T /ME100N03T-G N- Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME100N03T-G is the N-Channel logic enhancement mode RDS(ON) 3m @VGS=10V power field effect transistors are produced using high cell density, Super high density cell design for extremely low RDS(ON) DMOS trench technology. This high density process is especially Exceptional on-resistance... See More ⇒

Detailed specifications: JCS740RC, JCS740SC, JCS740BC, JCS740CC, JCS740FC, FTP11N08A, JY09M, ME100N03T, IRF640, ME120N04T, ME1302AT3, ME1302AT3-G, ME1303AT3, ME1303AT3-G, ME13N10A, ME13N10A-G, ME15N25

Keywords - ME100N03T-G MOSFET specs

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