All MOSFET. ME120N04T Datasheet

 

ME120N04T Datasheet and Replacement


   Type Designator: ME120N04T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 140 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 49.8 nS
   Cossⓘ - Output Capacitance: 516 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO220
 

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ME120N04T Datasheet (PDF)

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ME120N04T

ME120N04T N-Channel 40V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)4m@VGS=10V The ME120N04T is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high density process i

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ME120N04T

ME120N10T/ME120N10T-G N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)5.0m@VGS=10V The ME120N10T is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density proce

Datasheet: JCS740SC , JCS740BC , JCS740CC , JCS740FC , FTP11N08A , JY09M , ME100N03T , ME100N03T-G , IRF1404 , ME1302AT3 , ME1302AT3-G , ME1303AT3 , ME1303AT3-G , ME13N10A , ME13N10A-G , ME15N25 , ME15N25F .

History: DMN601K | 2SK1475 | AP3A010MT | AUIRF8736M2 | STW88N65M5 | HTD350C04 | SM7360EKQG

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