ME120N04T Specs and Replacement

Type Designator: ME120N04T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 140 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 49.8 nS

Cossⓘ - Output Capacitance: 516 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TO220

ME120N04T substitution

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ME120N04T datasheet

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 me120n04t.pdf pdf_icon

ME120N04T

ME120N04T N-Channel 40V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 4m @VGS=10V The ME120N04T is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high density process i... See More ⇒

 8.1. Size:1399K  matsuki electric
 me120n10t me120n10t-g.pdf pdf_icon

ME120N04T

ME120N10T/ME120N10T-G N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 5.0m @VGS=10V The ME120N10T is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density proce... See More ⇒

Detailed specifications: JCS740SC, JCS740BC, JCS740CC, JCS740FC, FTP11N08A, JY09M, ME100N03T, ME100N03T-G, IRF1404, ME1302AT3, ME1302AT3-G, ME1303AT3, ME1303AT3-G, ME13N10A, ME13N10A-G, ME15N25, ME15N25F

Keywords - ME120N04T MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.