All MOSFET. ME13N10A-G Datasheet

 

ME13N10A-G Datasheet and Replacement


   Type Designator: ME13N10A-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 29.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10.9 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.145 Ohm
   Package: TO252
 

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ME13N10A-G Datasheet (PDF)

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ME13N10A-G

ME13N10A/ME13N10A-G N- Channel 100V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME13N10A is the N-Channel logic enhancement mode power RDS(ON) 145m@VGS=10Vfield effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON)trench technology. This high density process is especially tailored to Exceptional on-res

Datasheet: ME100N03T , ME100N03T-G , ME120N04T , ME1302AT3 , ME1302AT3-G , ME1303AT3 , ME1303AT3-G , ME13N10A , AON6414A , ME15N25 , ME15N25F , ME15N25F-G , ME15N25-G , ME200N04T , ME200N04T-G , ME20N10-G , ME20N15F .

History: STD100N10F7 | STL24N60M2 | 2SK4113 | FQAF9P25 | SWB078R08ET | SWB086R68E7T

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