ME13N10A-G Specs and Replacement
Type Designator: ME13N10A-G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 29.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10.9 nS
Cossⓘ - Output Capacitance: 55 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.145 Ohm
Package: TO252
ME13N10A-G substitution
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ME13N10A-G datasheet
me13n10a me13n10a-g.pdf
ME13N10A/ME13N10A-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME13N10A is the N-Channel logic enhancement mode power RDS(ON) 145m @VGS=10V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to Exceptional on-res... See More ⇒
Detailed specifications: ME100N03T, ME100N03T-G, ME120N04T, ME1302AT3, ME1302AT3-G, ME1303AT3, ME1303AT3-G, ME13N10A, IRFB4227, ME15N25, ME15N25F, ME15N25F-G, ME15N25-G, ME200N04T, ME200N04T-G, ME20N10-G, ME20N15F
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