ME200N04T-G MOSFET. Datasheet pdf. Equivalent
Type Designator: ME200N04T-G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 231 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 189 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 137 nC
trⓘ - Rise Time: 767 nS
Cossⓘ - Output Capacitance: 1242 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: TO220
ME200N04T-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME200N04T-G Datasheet (PDF)
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me200n04t me200n04t-g.pdf
me200n04t me200n04t-g.pdf
ME200N04T / ME200N04T-GN- Channel 40V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)3.5m@VGS=10V The ME200N04T is the N-Channel logic enhancement mode power RDS(ON)4.7m@VGS=5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is espec
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