ME2355AN-G Specs and Replacement
Type Designator: ME2355AN-G
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.102 Ohm
Package: DFN1006-3
ME2355AN-G substitution
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ME2355AN-G datasheet
me2355an me2355an-g.pdf
Preliminary-ME2355AN/ME2355AN-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2355AN is the P-Channel logic enhancement mode power RDS(ON) 102m @VGS=-4.5V field effect transistors, using high cell density, DMOS trench RDS(ON) 132m @VGS=-2.5V technology. This high density process is especially tailored to RDS(ON) 158m @VGS=-1.8V minimize on-... See More ⇒
Detailed specifications: ME2320DS-G, ME2324D, ME2324D-G, ME2325S, ME2325S-G, ME2345AS, ME2345AS-G, ME2355AN, 2N60, ME25N15AL, ME25N15AL-G, ME2606, ME2606-G, ME2614, ME2614-G, ME2620-G, ME3205F
Keywords - ME2355AN-G MOSFET specs
ME2355AN-G cross reference
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