All MOSFET. ME2355AN-G Datasheet

 

ME2355AN-G Datasheet and Replacement


   Type Designator: ME2355AN-G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.102 Ohm
   Package: DFN1006-3
 

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ME2355AN-G Datasheet (PDF)

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ME2355AN-G

Preliminary-ME2355AN/ME2355AN-G P-Channel 30V (D-S) MOSFETGENERAL DESCRIPTIONFEATURES The ME2355AN is the P-Channel logic enhancement mode power RDS(ON)102m@VGS=-4.5Vfield effect transistors, using high cell density, DMOS trench RDS(ON)132m@VGS=-2.5Vtechnology. This high density process is especially tailored to RDS(ON)158m@VGS=-1.8Vminimize on-

Datasheet: ME2320DS-G , ME2324D , ME2324D-G , ME2325S , ME2325S-G , ME2345AS , ME2345AS-G , ME2355AN , 7N60 , ME25N15AL , ME25N15AL-G , ME2606 , ME2606-G , ME2614 , ME2614-G , ME2620-G , ME3205F .

History: ME25N15AL-G | AP9930AGM | DMP3099L | QM3005S | AP65SL145AFI | AP9926GEO-HF | AP9928GEO

Keywords - ME2355AN-G MOSFET datasheet

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