All MOSFET. ME25N15AL Datasheet

 

ME25N15AL Datasheet and Replacement


   Type Designator: ME25N15AL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 89.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 22.3 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15.8 nS
   Cossⓘ - Output Capacitance: 102 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm
   Package: TO252
 

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ME25N15AL Datasheet (PDF)

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 me25n15al me25n15al-g.pdf pdf_icon

ME25N15AL

ME25N15AL/ME25N15AL-G N- Channel 150V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME25N15AL is the N-Channel logic enhancement mode power RDS(ON) 78m@VGS=10Vfield effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON)trench technology. This high density process is especially tailored to Exceptional on-r

 9.1. Size:1175K  matsuki electric
 me25n06 me25n06-g.pdf pdf_icon

ME25N15AL

ME25N06/ME25N06-G N-Channel 60V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)62m@VGS=10VThe ME25N06 is the N-Channel logic enhancement mode power RDS(ON)86m@VGS=4.5Vfield effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON)trench technology. This high density process is especially tailored

Datasheet: ME2324D , ME2324D-G , ME2325S , ME2325S-G , ME2345AS , ME2345AS-G , ME2355AN , ME2355AN-G , K2611 , ME25N15AL-G , ME2606 , ME2606-G , ME2614 , ME2614-G , ME2620-G , ME3205F , ME3205F-G .

History: SW2N60B

Keywords - ME25N15AL MOSFET datasheet

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