ME25N15AL Specs and Replacement

Type Designator: ME25N15AL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 89.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 22.3 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15.8 nS

Cossⓘ - Output Capacitance: 102 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm

Package: TO252

ME25N15AL substitution

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ME25N15AL datasheet

 ..1. Size:2213K  matsuki electric
 me25n15al me25n15al-g.pdf pdf_icon

ME25N15AL

ME25N15AL/ME25N15AL-G N- Channel 150V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME25N15AL is the N-Channel logic enhancement mode power RDS(ON) 78m @VGS=10V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to Exceptional on-r... See More ⇒

 9.1. Size:1175K  matsuki electric
 me25n06 me25n06-g.pdf pdf_icon

ME25N15AL

ME25N06/ME25N06-G N-Channel 60V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 62m @VGS=10V The ME25N06 is the N-Channel logic enhancement mode power RDS(ON) 86m @VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored... See More ⇒

Detailed specifications: ME2324D, ME2324D-G, ME2325S, ME2325S-G, ME2345AS, ME2345AS-G, ME2355AN, ME2355AN-G, 8N60, ME25N15AL-G, ME2606, ME2606-G, ME2614, ME2614-G, ME2620-G, ME3205F, ME3205F-G

Keywords - ME25N15AL MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.