ME25N15AL-G MOSFET. Datasheet pdf. Equivalent
Type Designator: ME25N15AL-G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 89.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 22.3 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Total Gate Charge (Qg): 51.2 nC
Rise Time (tr): 15.8 nS
Drain-Source Capacitance (Cd): 102 pF
Maximum Drain-Source On-State Resistance (Rds): 0.078 Ohm
Package: TO252
ME25N15AL-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME25N15AL-G Datasheet (PDF)
me25n15al me25n15al-g.pdf
ME25N15AL/ME25N15AL-G N- Channel 150V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME25N15AL is the N-Channel logic enhancement mode power RDS(ON) 78m@VGS=10Vfield effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON)trench technology. This high density process is especially tailored to Exceptional on-r
me25n06 me25n06-g.pdf
ME25N06/ME25N06-G N-Channel 60V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)62m@VGS=10VThe ME25N06 is the N-Channel logic enhancement mode power RDS(ON)86m@VGS=4.5Vfield effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON)trench technology. This high density process is especially tailored
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
