ME25N15AL-G MOSFET. Datasheet pdf. Equivalent
Type Designator: ME25N15AL-G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 89.2 W
Maximum Drain-Source Voltage |Vds|: 150 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 22.3 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 51.2 nC
Rise Time (tr): 15.8 nS
Drain-Source Capacitance (Cd): 102 pF
Maximum Drain-Source On-State Resistance (Rds): 0.078 Ohm
Package: TO252
ME25N15AL-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME25N15AL-G Datasheet (PDF)
me25n15al me25n15al-g.pdf
ME25N15AL/ME25N15AL-G N- Channel 150V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME25N15AL is the N-Channel logic enhancement mode power RDS(ON) 78m@VGS=10Vfield effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON)trench technology. This high density process is especially tailored to Exceptional on-r
me25n06 me25n06-g.pdf
ME25N06/ME25N06-G N-Channel 60V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)62m@VGS=10VThe ME25N06 is the N-Channel logic enhancement mode power RDS(ON)86m@VGS=4.5Vfield effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON)trench technology. This high density process is especially tailored
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
