All MOSFET. ME2614-G Datasheet

 

ME2614-G Datasheet and Replacement


   Type Designator: ME2614-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 57 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.166 Ohm
   Package: SOT223
 

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ME2614-G Datasheet (PDF)

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 me2614 me2614-g.pdf pdf_icon

ME2614-G

ME2614/ME2614-G N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2614 is the N-Channel logic enhancement mode power RDS(ON)166m@VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON)213m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(

 9.1. Size:983K  matsuki electric
 me2612 me2612-g.pdf pdf_icon

ME2614-G

ME2612/ME2612-G N-Channel 150V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)375m@VGS=10V The ME2612 is the N-Channel logic enhancement mode power RDS(ON)390m@VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially ta

Datasheet: ME2345AS-G , ME2355AN , ME2355AN-G , ME25N15AL , ME25N15AL-G , ME2606 , ME2606-G , ME2614 , IRFZ48N , ME2620-G , ME3205F , ME3205F-G , ME3205H-G , ME3424D , ME3424D-G , ME3443 , ME3443-G .

History: HY1808APM | ST2301A | SSF1020A | CR4N65A4K | SVF4N65T | VB3222 | SI4N60-TN3-R

Keywords - ME2614-G MOSFET datasheet

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