All MOSFET. ME2620-G Datasheet

 

ME2620-G Datasheet and Replacement


   Type Designator: ME2620-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21.4 nS
   Cossⓘ - Output Capacitance: 27 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.756 Ohm
   Package: SOT223
 

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ME2620-G Datasheet (PDF)

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ME2620-G

ME2620-G N-Channel 200-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)756m@VGS=10VThe ME2620-G is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON)field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC currenttechnology. This high density process is especially

Datasheet: ME2355AN , ME2355AN-G , ME25N15AL , ME25N15AL-G , ME2606 , ME2606-G , ME2614 , ME2614-G , IRF1405 , ME3205F , ME3205F-G , ME3205H-G , ME3424D , ME3424D-G , ME3443 , ME3443-G , ME3449D .

History: IRFH7190

Keywords - ME2620-G MOSFET datasheet

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