ME2620-G Specs and Replacement

Type Designator: ME2620-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21.4 nS

Cossⓘ - Output Capacitance: 27 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.756 Ohm

Package: SOT223

ME2620-G substitution

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ME2620-G datasheet

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ME2620-G

ME2620-G N-Channel 200-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 756m @VGS=10V The ME2620-G is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density process is especially ... See More ⇒

Detailed specifications: ME2355AN, ME2355AN-G, ME25N15AL, ME25N15AL-G, ME2606, ME2606-G, ME2614, ME2614-G, IRF1405, ME3205F, ME3205F-G, ME3205H-G, ME3424D, ME3424D-G, ME3443, ME3443-G, ME3449D

Keywords - ME2620-G MOSFET specs

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