ME2620-G MOSFET. Datasheet pdf. Equivalent
Type Designator: ME2620-G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 1.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 14.3 nC
trⓘ - Rise Time: 21.4 nS
Cossⓘ - Output Capacitance: 27 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.756 Ohm
Package: SOT223
ME2620-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME2620-G Datasheet (PDF)
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me2620-g.pdf
me2620-g.pdf
ME2620-G N-Channel 200-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)756m@VGS=10VThe ME2620-G is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON)field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC currenttechnology. This high density process is especially
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