ME3424D-G MOSFET. Datasheet pdf. Equivalent
Type Designator: ME3424D-G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 68 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: TSOP6
ME3424D-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME3424D-G Datasheet (PDF)
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me3424d me3424d-g.pdf
me3424d me3424d-g.pdf
ME3424D/ME3424D-G N-Channel 30V (D-S) MOSFET , ESD ProtectedGENERAL DESCRIPTION FEATURES RDS(ON)28m@VGS=10V The ME3424D is the N-Channel logic enhancement mode power RDS(ON)42m@VGS=4.5V field effect transistors are produced using high cell density , DMOS ESD Protected trench technology. This high density process is especially tailored to Super high
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