All MOSFET. ME3424D-G Datasheet

 

ME3424D-G Datasheet and Replacement


   Type Designator: ME3424D-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 68 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: TSOP6
 

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ME3424D-G Datasheet (PDF)

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ME3424D-G

ME3424D/ME3424D-G N-Channel 30V (D-S) MOSFET , ESD ProtectedGENERAL DESCRIPTION FEATURES RDS(ON)28m@VGS=10V The ME3424D is the N-Channel logic enhancement mode power RDS(ON)42m@VGS=4.5V field effect transistors are produced using high cell density , DMOS ESD Protected trench technology. This high density process is especially tailored to Super high

Datasheet: ME2606-G , ME2614 , ME2614-G , ME2620-G , ME3205F , ME3205F-G , ME3205H-G , ME3424D , 60N06 , ME3443 , ME3443-G , ME3449D , ME3449D-G , ME3483 , ME3483-G , ME3920D , ME3920D-G .

History: SIF160N040 | STD120N4LF6 | CPC3701C | CRJF390N65GC | IRF5803 | UJ0100 | TMPF8N25Z

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