All MOSFET. ME3449D-G Datasheet

 

ME3449D-G Datasheet and Replacement


   Type Designator: ME3449D-G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 77 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TSOP6
 

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ME3449D-G Datasheet (PDF)

 ..1. Size:1549K  matsuki electric
 me3449d me3449d-g.pdf pdf_icon

ME3449D-G

ME3449D/ME3449D-G P-Channel 30V (D-S) MOSFET, ESD Protection GENERAL DESCRIPTION FEATURES The ME3449D is the P-Channel logic enhancement mode power RDS(ON)60m@VGS=-10V field effect transistors are produced using high cell density, DMOS RDS(ON)92m@VGS=-4.5V trench technology. This high density process is especially tailored to Super high density cell design for

 9.1. Size:761K  matsuki electric
 me3443 me3443-g.pdf pdf_icon

ME3449D-G

ME3443/ME3443-G P-Channel 2.5V (G-S) MOSFET GENERAL DESCRIPTION FEATURES -20V/-4.7A,RDS(ON)=65m@VGS=-4.5V The ME3443 is the P-Channel logic enhancement mode power field -20V/-3.7A,RDS(ON)=85m@VGS=-2.5V effect transistors are produced using high cell density , DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density proc

Datasheet: ME3205F , ME3205F-G , ME3205H-G , ME3424D , ME3424D-G , ME3443 , ME3443-G , ME3449D , IRF9640 , ME3483 , ME3483-G , ME3920D , ME3920D-G , ME3920-G , ME4425 , ME4425-G , ME4457 .

History: FQA13N80-F109 | APQ02SN60A

Keywords - ME3449D-G MOSFET datasheet

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