ME3449D-G Specs and Replacement

Type Designator: ME3449D-G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 77 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: TSOP6

ME3449D-G substitution

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ME3449D-G datasheet

 ..1. Size:1549K  matsuki electric
 me3449d me3449d-g.pdf pdf_icon

ME3449D-G

ME3449D/ME3449D-G P-Channel 30V (D-S) MOSFET, ESD Protection GENERAL DESCRIPTION FEATURES The ME3449D is the P-Channel logic enhancement mode power RDS(ON) 60m @VGS=-10V field effect transistors are produced using high cell density, DMOS RDS(ON) 92m @VGS=-4.5V trench technology. This high density process is especially tailored to Super high density cell design for ... See More ⇒

 9.1. Size:761K  matsuki electric
 me3443 me3443-g.pdf pdf_icon

ME3449D-G

ME3443/ME3443-G P-Channel 2.5V (G-S) MOSFET GENERAL DESCRIPTION FEATURES -20V/-4.7A,RDS(ON)=65m @VGS=-4.5V The ME3443 is the P-Channel logic enhancement mode power field -20V/-3.7A,RDS(ON)=85m @VGS=-2.5V effect transistors are produced using high cell density , DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density proc... See More ⇒

Detailed specifications: ME3205F, ME3205F-G, ME3205H-G, ME3424D, ME3424D-G, ME3443, ME3443-G, ME3449D, K2611, ME3483, ME3483-G, ME3920D, ME3920D-G, ME3920-G, ME4425, ME4425-G, ME4457

Keywords - ME3449D-G MOSFET specs

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