All MOSFET. ME3449D-G Datasheet

 

ME3449D-G Datasheet and Replacement


   Type Designator: ME3449D-G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 4.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 77 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TSOP6
      - MOSFET Cross-Reference Search

 

ME3449D-G Datasheet (PDF)

 ..1. Size:1549K  matsuki electric
 me3449d me3449d-g.pdf pdf_icon

ME3449D-G

ME3449D/ME3449D-G P-Channel 30V (D-S) MOSFET, ESD Protection GENERAL DESCRIPTION FEATURES The ME3449D is the P-Channel logic enhancement mode power RDS(ON)60m@VGS=-10V field effect transistors are produced using high cell density, DMOS RDS(ON)92m@VGS=-4.5V trench technology. This high density process is especially tailored to Super high density cell design for

 9.1. Size:761K  matsuki electric
 me3443 me3443-g.pdf pdf_icon

ME3449D-G

ME3443/ME3443-G P-Channel 2.5V (G-S) MOSFET GENERAL DESCRIPTION FEATURES -20V/-4.7A,RDS(ON)=65m@VGS=-4.5V The ME3443 is the P-Channel logic enhancement mode power field -20V/-3.7A,RDS(ON)=85m@VGS=-2.5V effect transistors are produced using high cell density , DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density proc

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: 1N65G-K08-5060-R | IRLU9343PBF | 2SK3437 | SIHFD9010 | R6007ENX | 15NM70L-TF34-T | VST012N06MS

Keywords - ME3449D-G MOSFET datasheet

 ME3449D-G cross reference
 ME3449D-G equivalent finder
 ME3449D-G lookup
 ME3449D-G substitution
 ME3449D-G replacement

 

 
Back to Top

 


 
.