All MOSFET. ME3483-G Datasheet

 

ME3483-G Datasheet and Replacement


   Type Designator: ME3483-G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 106 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: SOT26
 

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ME3483-G Datasheet (PDF)

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ME3483-G

ME3483/ME3483-G P-Channel 60V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME3483 is the P-Channel logic enhancement mode power field RDS(ON)80m@VGS=-10Veffect transistors are produced using high cell density, DMOS trench RDS(ON)100m@VGS=-4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)

Datasheet: ME3205H-G , ME3424D , ME3424D-G , ME3443 , ME3443-G , ME3449D , ME3449D-G , ME3483 , MMD60R360PRH , ME3920D , ME3920D-G , ME3920-G , ME4425 , ME4425-G , ME4457 , ME4457-G , ME4468 .

History: STF11N65M2-045Y | OSG55R290AF | SI2301BDS-T1-GE3 | IRF7460PBF | MTP3055AFI | SML25SCM650N2A | IPDD60R150G7

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