ME3483-G Specs and Replacement

Type Designator: ME3483-G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 106 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: SOT26

ME3483-G substitution

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ME3483-G datasheet

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ME3483-G

ME3483/ME3483-G P-Channel 60V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME3483 is the P-Channel logic enhancement mode power field RDS(ON) 80m @VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON) 100m @VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)... See More ⇒

Detailed specifications: ME3205H-G, ME3424D, ME3424D-G, ME3443, ME3443-G, ME3449D, ME3449D-G, ME3483, RU7088R, ME3920D, ME3920D-G, ME3920-G, ME4425, ME4425-G, ME4457, ME4457-G, ME4468

Keywords - ME3483-G MOSFET specs

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