ME3483-G Datasheet and Replacement
Type Designator: ME3483-G
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 106 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: SOT26
ME3483-G substitution
ME3483-G Datasheet (PDF)
me3483 me3483-g.pdf

ME3483/ME3483-G P-Channel 60V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME3483 is the P-Channel logic enhancement mode power field RDS(ON)80m@VGS=-10Veffect transistors are produced using high cell density, DMOS trench RDS(ON)100m@VGS=-4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)
Datasheet: ME3205H-G , ME3424D , ME3424D-G , ME3443 , ME3443-G , ME3449D , ME3449D-G , ME3483 , AON7403 , ME3920D , ME3920D-G , ME3920-G , ME4425 , ME4425-G , ME4457 , ME4457-G , ME4468 .
History: GSM7420 | FDN359BNF095
Keywords - ME3483-G MOSFET datasheet
ME3483-G cross reference
ME3483-G equivalent finder
ME3483-G lookup
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History: GSM7420 | FDN359BNF095



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