ME3920D Specs and Replacement

Type Designator: ME3920D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: TSOP6

ME3920D substitution

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ME3920D datasheet

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 me3920d me3920d-g.pdf pdf_icon

ME3920D

ME3920D/ME3920D-G N-Channel 30V (D-S) MOSFET , ESD Protected GENERAL DESCRIPTION FEATURES The ME3920D-G is the Dual N-Channel logic enhancement mode RDS(ON) 30m @VGS=10V power field effect transistors, using high cell density, DMOS trench RDS(ON) 45m @VGS=4.5V technology. This high density process is especially tailored to Super high density cell design for extreme... See More ⇒

 8.1. Size:1025K  matsuki electric
 me3920-g.pdf pdf_icon

ME3920D

ME3920-G Dual N-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION FEATURES FEATURES RDS(ON) 24m @ VGS =10V The ME3920-G is the Dual N-Channel logic enhancement mode RDS(ON) 46m @VGS=4.5V power field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tail... See More ⇒

Detailed specifications: ME3424D, ME3424D-G, ME3443, ME3443-G, ME3449D, ME3449D-G, ME3483, ME3483-G, MMIS60R580P, ME3920D-G, ME3920-G, ME4425, ME4425-G, ME4457, ME4457-G, ME4468, ME4468-G

Keywords - ME3920D MOSFET specs

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