All MOSFET. ME3920D Datasheet

 

ME3920D Datasheet and Replacement


   Type Designator: ME3920D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TSOP6
 

 ME3920D substitution

   - MOSFET ⓘ Cross-Reference Search

 

ME3920D Datasheet (PDF)

 ..1. Size:1121K  matsuki electric
 me3920d me3920d-g.pdf pdf_icon

ME3920D

ME3920D/ME3920D-G N-Channel 30V (D-S) MOSFET , ESD Protected GENERAL DESCRIPTION FEATURES The ME3920D-G is the Dual N-Channel logic enhancement mode RDS(ON)30m@VGS=10V power field effect transistors, using high cell density, DMOS trench RDS(ON)45m@VGS=4.5V technology. This high density process is especially tailored to Super high density cell design for extreme

 8.1. Size:1025K  matsuki electric
 me3920-g.pdf pdf_icon

ME3920D

ME3920-G Dual N-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION FEATURES FEATURES RDS(ON)24m@ VGS =10V The ME3920-G is the Dual N-Channel logic enhancement mode RDS(ON)46m@VGS=4.5V power field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tail

Datasheet: ME3424D , ME3424D-G , ME3443 , ME3443-G , ME3449D , ME3449D-G , ME3483 , ME3483-G , 2N7002 , ME3920D-G , ME3920-G , ME4425 , ME4425-G , ME4457 , ME4457-G , ME4468 , ME4468-G .

History: STD2N62K3

Keywords - ME3920D MOSFET datasheet

 ME3920D cross reference
 ME3920D equivalent finder
 ME3920D lookup
 ME3920D substitution
 ME3920D replacement

 

 
Back to Top

 


 
.