ME3920-G MOSFET. Datasheet pdf. Equivalent
Type Designator: ME3920-G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 6.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 30.8 nS
Cossⓘ - Output Capacitance: 54 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: TSOP6
ME3920-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME3920-G Datasheet (PDF)
me3920-g.pdf
ME3920-G Dual N-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION FEATURES FEATURES RDS(ON)24m@ VGS =10V The ME3920-G is the Dual N-Channel logic enhancement mode RDS(ON)46m@VGS=4.5V power field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tail
me3920d me3920d-g.pdf
ME3920D/ME3920D-G N-Channel 30V (D-S) MOSFET , ESD Protected GENERAL DESCRIPTION FEATURES The ME3920D-G is the Dual N-Channel logic enhancement mode RDS(ON)30m@VGS=10V power field effect transistors, using high cell density, DMOS trench RDS(ON)45m@VGS=4.5V technology. This high density process is especially tailored to Super high density cell design for extreme
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