All MOSFET. ME4425-G Datasheet

 

ME4425-G Datasheet and Replacement


   Type Designator: ME4425-G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18.3 nS
   Cossⓘ - Output Capacitance: 383 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: SOP8
 

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ME4425-G Datasheet (PDF)

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ME4425-G

ME4425/ME4425-G P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4425 is the P-Channel logic enhancement mode power field RDS(ON)14m@VGS=-10V effect transistors are produced using high cell density , DMOS trench RDS(ON)19m@VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS

Datasheet: ME3449D , ME3449D-G , ME3483 , ME3483-G , ME3920D , ME3920D-G , ME3920-G , ME4425 , IRFP064N , ME4457 , ME4457-G , ME4468 , ME4468-G , ME4470 , ME4470-G , ME4473-G , ME4485 .

History: APT34N80B2C3G

Keywords - ME4425-G MOSFET datasheet

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