ME4425-G Specs and Replacement

Type Designator: ME4425-G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18.3 nS

Cossⓘ - Output Capacitance: 383 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: SOP8

ME4425-G substitution

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ME4425-G datasheet

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ME4425-G

ME4425/ME4425-G P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4425 is the P-Channel logic enhancement mode power field RDS(ON) 14m @VGS=-10V effect transistors are produced using high cell density , DMOS trench RDS(ON) 19m @VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS... See More ⇒

Detailed specifications: ME3449D, ME3449D-G, ME3483, ME3483-G, ME3920D, ME3920D-G, ME3920-G, ME4425, IRFP064N, ME4457, ME4457-G, ME4468, ME4468-G, ME4470, ME4470-G, ME4473-G, ME4485

Keywords - ME4425-G MOSFET specs

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