ME4457-G Datasheet and Replacement
Type Designator: ME4457-G
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 99 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: SOP8
ME4457-G substitution
ME4457-G Datasheet (PDF)
me4457 me4457-g.pdf

ME4457/ME4457-G P-Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4457 is the P-Channel logic enhancement mode power field RDS(ON)45m@VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON)68m@VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(
me4454 me4454-g.pdf

ME4454/ME4454-G N-Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4454 is the N-Channel logic enhancement mode power field RDS(ON)13m@VGS=10V effect transistors are produced using high cell density , DMOS trench RDS(ON)18m@VGS=4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(O
Datasheet: ME3483 , ME3483-G , ME3920D , ME3920D-G , ME3920-G , ME4425 , ME4425-G , ME4457 , BS170 , ME4468 , ME4468-G , ME4470 , ME4470-G , ME4473-G , ME4485 , ME4485-G , ME4832 .
History: SFS12R08GNF | WNM12N65 | STF8233 | 2SK1255 | IRF830ALPBF | BUZ44A | 4AK17
Keywords - ME4457-G MOSFET datasheet
ME4457-G cross reference
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History: SFS12R08GNF | WNM12N65 | STF8233 | 2SK1255 | IRF830ALPBF | BUZ44A | 4AK17



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