All MOSFET. ME4468-G Datasheet

 

ME4468-G MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME4468-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 12.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 46.3 nC
   trⓘ - Rise Time: 19.4 nS
   Cossⓘ - Output Capacitance: 285 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: SOP8

 ME4468-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME4468-G Datasheet (PDF)

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 me4468 me4468-g.pdf

ME4468-G ME4468-G

ME4468/ ME4468-G N-Channel 60V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)10m@VGS=10VThe ME4468 is the N-Channel logic enhancement mode power field RDS(ON)13m@VGS=4.5Veffect transistors, using high cell density, DMOS trench technology. Super high density cell design for extremely low RDS(ON)This high density process is especially tailored to minimize o

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History: STS65R580FS2 | SM1A24NSK | NCE60P06S

 

 
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