ME4468-G MOSFET. Datasheet pdf. Equivalent
Type Designator: ME4468-G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 12.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 46.3 nC
trⓘ - Rise Time: 19.4 nS
Cossⓘ - Output Capacitance: 285 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: SOP8
ME4468-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME4468-G Datasheet (PDF)
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me4468 me4468-g.pdf
me4468 me4468-g.pdf
ME4468/ ME4468-G N-Channel 60V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)10m@VGS=10VThe ME4468 is the N-Channel logic enhancement mode power field RDS(ON)13m@VGS=4.5Veffect transistors, using high cell density, DMOS trench technology. Super high density cell design for extremely low RDS(ON)This high density process is especially tailored to minimize o
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