ME4468-G Specs and Replacement

Type Designator: ME4468-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19.4 nS

Cossⓘ - Output Capacitance: 285 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: SOP8

ME4468-G substitution

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ME4468-G datasheet

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ME4468-G

ME4468/ ME4468-G N-Channel 60V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 10m @VGS=10V The ME4468 is the N-Channel logic enhancement mode power field RDS(ON) 13m @VGS=4.5V effect transistors, using high cell density, DMOS trench technology. Super high density cell design for extremely low RDS(ON) This high density process is especially tailored to minimize o... See More ⇒

Detailed specifications: ME3920D, ME3920D-G, ME3920-G, ME4425, ME4425-G, ME4457, ME4457-G, ME4468, IRF3205, ME4470, ME4470-G, ME4473-G, ME4485, ME4485-G, ME4832, ME4832-G, ME4856

Keywords - ME4468-G MOSFET specs

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