All MOSFET. ME4468-G Datasheet

 

ME4468-G Datasheet and Replacement


   Type Designator: ME4468-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19.4 nS
   Cossⓘ - Output Capacitance: 285 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: SOP8
 

 ME4468-G substitution

   - MOSFET ⓘ Cross-Reference Search

 

ME4468-G Datasheet (PDF)

 ..1. Size:2236K  matsuki electric
 me4468 me4468-g.pdf pdf_icon

ME4468-G

ME4468/ ME4468-G N-Channel 60V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)10m@VGS=10VThe ME4468 is the N-Channel logic enhancement mode power field RDS(ON)13m@VGS=4.5Veffect transistors, using high cell density, DMOS trench technology. Super high density cell design for extremely low RDS(ON)This high density process is especially tailored to minimize o

Datasheet: ME3920D , ME3920D-G , ME3920-G , ME4425 , ME4425-G , ME4457 , ME4457-G , ME4468 , IRF3205 , ME4470 , ME4470-G , ME4473-G , ME4485 , ME4485-G , ME4832 , ME4832-G , ME4856 .

History: HIRF730F | HYG060P04LQ1V

Keywords - ME4468-G MOSFET datasheet

 ME4468-G cross reference
 ME4468-G equivalent finder
 ME4468-G lookup
 ME4468-G substitution
 ME4468-G replacement

 

 
Back to Top

 


 
.