ME4470 Specs and Replacement

Type Designator: ME4470

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19.1 nS

Cossⓘ - Output Capacitance: 460 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm

Package: SOP8

ME4470 substitution

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ME4470 datasheet

 ..1. Size:1248K  matsuki electric
 me4470 me4470-g.pdf pdf_icon

ME4470

ME4470/ME4470-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4470 is the N-Channel logic enhancement mode power field RDS(ON) 3.6m @VGS=10V effect transistors are produced using high cell density , DMOS trench RDS(ON) 5.1m @VGS=4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)... See More ⇒

 9.1. Size:1057K  matsuki electric
 me4473-g.pdf pdf_icon

ME4470

ME4473-G P- Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4473-G is the P-Channel logic enhancement mode power RDS(ON) 17m @VGS=-10V field effect transistors are produced using high cell density, DMOS RDS(ON) 21m @VGS=-4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON) ... See More ⇒

Detailed specifications: ME3920D-G, ME3920-G, ME4425, ME4425-G, ME4457, ME4457-G, ME4468, ME4468-G, IRF740, ME4470-G, ME4473-G, ME4485, ME4485-G, ME4832, ME4832-G, ME4856, ME4856-G

Keywords - ME4470 MOSFET specs

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