All MOSFET. ME4470-G Datasheet

 

ME4470-G Datasheet and Replacement


   Type Designator: ME4470-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id| ⓘ - Maximum Drain Current: 20.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 74 nC
   tr ⓘ - Rise Time: 19.1 nS
   Cossⓘ - Output Capacitance: 460 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
   Package: SOP8
 

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ME4470-G Datasheet (PDF)

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 me4470 me4470-g.pdf pdf_icon

ME4470-G

ME4470/ME4470-G N-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME4470 is the N-Channel logic enhancement mode power field RDS(ON)3.6m@VGS=10Veffect transistors are produced using high cell density , DMOS trench RDS(ON)5.1m@VGS=4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)

 9.1. Size:1057K  matsuki electric
 me4473-g.pdf pdf_icon

ME4470-G

ME4473-G P- Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4473-G is the P-Channel logic enhancement mode power RDS(ON)17m@VGS=-10V field effect transistors are produced using high cell density, DMOS RDS(ON)21m@VGS=-4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)

Datasheet: ME3920-G , ME4425 , ME4425-G , ME4457 , ME4457-G , ME4468 , ME4468-G , ME4470 , IRF840 , ME4473-G , ME4485 , ME4485-G , ME4832 , ME4832-G , ME4856 , ME4856-G , ME4894 .

Keywords - ME4470-G MOSFET datasheet

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