ME4473-G MOSFET. Datasheet pdf. Equivalent
Type Designator: ME4473-G
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 9.7 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 91.3 nC
trⓘ - Rise Time: 101 nS
Cossⓘ - Output Capacitance: 569 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: SOP8
ME4473-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME4473-G Datasheet (PDF)
me4473-g.pdf
ME4473-G P- Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4473-G is the P-Channel logic enhancement mode power RDS(ON)17m@VGS=-10V field effect transistors are produced using high cell density, DMOS RDS(ON)21m@VGS=-4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)
me4470 me4470-g.pdf
ME4470/ME4470-G N-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME4470 is the N-Channel logic enhancement mode power field RDS(ON)3.6m@VGS=10Veffect transistors are produced using high cell density , DMOS trench RDS(ON)5.1m@VGS=4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)
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