All MOSFET. ME4485 Datasheet

 

ME4485 MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME4485
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 10.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 53.2 nC
   trⓘ - Rise Time: 26.2 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: SOP8

 ME4485 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME4485 Datasheet (PDF)

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 me4485 me4485-g.pdf

ME4485 ME4485

ME4485/ME4485-G P-Channel 40V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME4485 P-Channel logic enhancement mode power field effect RDS(ON) 12m@VGS=-10Vtransistors are produced using high cell density, DMOS trench RDS(ON) 17m@ VGS=-4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)min

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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