All MOSFET. ME4485 Datasheet

 

ME4485 Datasheet and Replacement


   Type Designator: ME4485
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 10.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 26.2 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: SOP8
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ME4485 Datasheet (PDF)

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ME4485

ME4485/ME4485-G P-Channel 40V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME4485 P-Channel logic enhancement mode power field effect RDS(ON) 12m@VGS=-10Vtransistors are produced using high cell density, DMOS trench RDS(ON) 17m@ VGS=-4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)min

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: F5020 | UF630G-TF1-T | IPD60R1K5CE | AFN3456 | IXFH110N10P | RSE002P03TL | KF12N60P

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