ME4485 Specs and Replacement

Type Designator: ME4485

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26.2 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: SOP8

ME4485 substitution

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ME4485 datasheet

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 me4485 me4485-g.pdf pdf_icon

ME4485

ME4485/ME4485-G P-Channel 40V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4485 P-Channel logic enhancement mode power field effect RDS(ON) 12m @VGS=-10V transistors are produced using high cell density, DMOS trench RDS(ON) 17m @ VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON) min... See More ⇒

Detailed specifications: ME4425-G, ME4457, ME4457-G, ME4468, ME4468-G, ME4470, ME4470-G, ME4473-G, IRF540N, ME4485-G, ME4832, ME4832-G, ME4856, ME4856-G, ME4894, ME4894-G, ME4906-G

Keywords - ME4485 MOSFET specs

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