All MOSFET. ME4485-G Datasheet

 

ME4485-G Datasheet and Replacement


   Type Designator: ME4485-G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 26.2 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: SOP8
 

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ME4485-G Datasheet (PDF)

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ME4485-G

ME4485/ME4485-G P-Channel 40V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME4485 P-Channel logic enhancement mode power field effect RDS(ON) 12m@VGS=-10Vtransistors are produced using high cell density, DMOS trench RDS(ON) 17m@ VGS=-4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)min

Datasheet: ME4457 , ME4457-G , ME4468 , ME4468-G , ME4470 , ME4470-G , ME4473-G , ME4485 , IRF540N , ME4832 , ME4832-G , ME4856 , ME4856-G , ME4894 , ME4894-G , ME4906-G , ME4920 .

History: IPD60R380P6 | 2SK1916-01R

Keywords - ME4485-G MOSFET datasheet

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