ME4485-G MOSFET. Datasheet pdf. Equivalent
Type Designator: ME4485-G
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 10.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 53.2 nC
trⓘ - Rise Time: 26.2 nS
Cossⓘ - Output Capacitance: 250 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: SOP8
ME4485-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME4485-G Datasheet (PDF)
me4485 me4485-g.pdf
ME4485/ME4485-G P-Channel 40V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME4485 P-Channel logic enhancement mode power field effect RDS(ON) 12m@VGS=-10Vtransistors are produced using high cell density, DMOS trench RDS(ON) 17m@ VGS=-4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)min
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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