All MOSFET. ME4485-G Datasheet

 

ME4485-G Datasheet and Replacement


   Type Designator: ME4485-G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 10.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 26.2 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: SOP8
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ME4485-G Datasheet (PDF)

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ME4485-G

ME4485/ME4485-G P-Channel 40V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME4485 P-Channel logic enhancement mode power field effect RDS(ON) 12m@VGS=-10Vtransistors are produced using high cell density, DMOS trench RDS(ON) 17m@ VGS=-4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)min

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: MMF70R900PTH | WST2307 | SVG104R5NS6 | UF630G-TF3-T | HGP055N12S | SD10425JAA | IPD050N03L

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