ME4832-G Specs and Replacement

Type Designator: ME4832-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 71.7 nS

Cossⓘ - Output Capacitance: 202 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: SOP8

ME4832-G substitution

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ME4832-G datasheet

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ME4832-G

ME4832/ME4832-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 5.5 m @VGS=10V The ME4832-G is the N-Channel logic enhancement mode power RDS(ON) 7.2m @VGS=4.5V field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailored to ... See More ⇒

Detailed specifications: ME4468, ME4468-G, ME4470, ME4470-G, ME4473-G, ME4485, ME4485-G, ME4832, IRFP460, ME4856, ME4856-G, ME4894, ME4894-G, ME4906-G, ME4920, ME4920-G, ME4947

Keywords - ME4832-G MOSFET specs

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