All MOSFET. ME4832-G Datasheet

 

ME4832-G Datasheet and Replacement


   Type Designator: ME4832-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 71.7 nS
   Cossⓘ - Output Capacitance: 202 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: SOP8
 

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ME4832-G Datasheet (PDF)

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ME4832-G

ME4832/ME4832-G N-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)5.5 m@VGS=10VThe ME4832-G is the N-Channel logic enhancement mode power RDS(ON)7.2m@VGS=4.5Vfield effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON)technology. This high density process is especially tailored to

Datasheet: ME4468 , ME4468-G , ME4470 , ME4470-G , ME4473-G , ME4485 , ME4485-G , ME4832 , IRF640 , ME4856 , ME4856-G , ME4894 , ME4894-G , ME4906-G , ME4920 , ME4920-G , ME4947 .

History: IPS70R600P7S | TK5A60D | SSM3J358R

Keywords - ME4832-G MOSFET datasheet

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