All MOSFET. ME4856 Datasheet

 

ME4856 MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME4856
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 53 nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 358 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: SOP8

 ME4856 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME4856 Datasheet (PDF)

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 me4856 me4856-g.pdf

ME4856 ME4856

ME4856/ME4856-G N-Channel 30V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME4856 is the N-Channel logic enhancement mode power field RDS(ON)6m@VGS=10Veffect transistors are produced using high cell density , DMOS trench RDS(ON)8.5m@VGS=4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)m

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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