All MOSFET. ME4856 Datasheet

 

ME4856 Datasheet and Replacement


   Type Designator: ME4856
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 358 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: SOP8
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ME4856 Datasheet (PDF)

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 me4856 me4856-g.pdf pdf_icon

ME4856

ME4856/ME4856-G N-Channel 30V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME4856 is the N-Channel logic enhancement mode power field RDS(ON)6m@VGS=10Veffect transistors are produced using high cell density , DMOS trench RDS(ON)8.5m@VGS=4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)m

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History: 2SK2013 | MTB60B06Q8 | WSF20N20 | IRF530NPBF | 2SK2876-01MR | TPC8035-H | PB606BA

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