All MOSFET. ME4894-G Datasheet

 

ME4894-G Datasheet and Replacement


   Type Designator: ME4894-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: SOP8
 

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ME4894-G Datasheet (PDF)

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ME4894-G

ME4894/ME4894-G N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4894-G is the N-Channel logic enhancement mode power RDS(ON)11m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)17.5m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RD

Datasheet: ME4473-G , ME4485 , ME4485-G , ME4832 , ME4832-G , ME4856 , ME4856-G , ME4894 , IRFP260N , ME4906-G , ME4920 , ME4920-G , ME4947 , ME4947-G , ME4970A , ME4970A-G , ME4972-G .

History: NTHL080N120SC1A

Keywords - ME4894-G MOSFET datasheet

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