ME4894-G Specs and Replacement

Type Designator: ME4894-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: SOP8

ME4894-G substitution

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ME4894-G datasheet

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ME4894-G

ME4894/ME4894-G N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4894-G is the N-Channel logic enhancement mode power RDS(ON) 11m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 17.5m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RD... See More ⇒

Detailed specifications: ME4473-G, ME4485, ME4485-G, ME4832, ME4832-G, ME4856, ME4856-G, ME4894, IRLZ44N, ME4906-G, ME4920, ME4920-G, ME4947, ME4947-G, ME4970A, ME4970A-G, ME4972-G

Keywords - ME4894-G MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.