All MOSFET. ME4906-G Datasheet

 

ME4906-G Datasheet and Replacement


   Type Designator: ME4906-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27.3 nS
   Cossⓘ - Output Capacitance: 131 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.154 Ohm
   Package: SOP8
 

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ME4906-G Datasheet (PDF)

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ME4906-G

ME4906-G N- Channel 150V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)154m@VGS=10VThe ME4906-G is the N-Channel logic enhancement mode power RDS(ON)169m@VGS=10Vfield effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON)trench technology. This high density process is especially tailored to

Datasheet: ME4485 , ME4485-G , ME4832 , ME4832-G , ME4856 , ME4856-G , ME4894 , ME4894-G , IRF640N , ME4920 , ME4920-G , ME4947 , ME4947-G , ME4970A , ME4970A-G , ME4972-G , ME50N02 .

History: IXFN22N120 | WMB175DN10LG4 | ELM34411AA | TK50P04M1 | FDMC8010DC | IRFL014N | MX2N5116

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