ME4906-G Specs and Replacement

Type Designator: ME4906-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27.3 nS

Cossⓘ - Output Capacitance: 131 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.154 Ohm

Package: SOP8

ME4906-G substitution

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ME4906-G datasheet

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ME4906-G

ME4906-G N- Channel 150V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 154m @VGS=10V The ME4906-G is the N-Channel logic enhancement mode power RDS(ON) 169m @VGS=10V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to ... See More ⇒

Detailed specifications: ME4485, ME4485-G, ME4832, ME4832-G, ME4856, ME4856-G, ME4894, ME4894-G, IRFB4110, ME4920, ME4920-G, ME4947, ME4947-G, ME4970A, ME4970A-G, ME4972-G, ME50N02

Keywords - ME4906-G MOSFET specs

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