ME55N06-G MOSFET. Datasheet pdf. Equivalent
Type Designator: ME55N06-G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 64 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 114 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 597 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
Package: TO252
ME55N06-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME55N06-G Datasheet (PDF)
me55n06 me55n06-g.pdf
ME55N06/ ME55N06-GN-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME55N06 is the N-Channel logic enhancement mode power RDS(ON)9.5m@VGS=10V Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density process
me55n06a me55n06a-g.pdf
ME55N06A/ ME55N06A-G N-Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME55N06A is the N-Channel logic enhancement mode power RDS(ON)9.5m@VGS=10V Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density proces
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
