All MOSFET. ME55N06-G Datasheet

 

ME55N06-G Datasheet and Replacement


   Type Designator: ME55N06-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 64 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 597 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: TO252
 

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ME55N06-G Datasheet (PDF)

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ME55N06-G

ME55N06/ ME55N06-GN-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME55N06 is the N-Channel logic enhancement mode power RDS(ON)9.5m@VGS=10V Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density process

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ME55N06-G

ME55N06A/ ME55N06A-G N-Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME55N06A is the N-Channel logic enhancement mode power RDS(ON)9.5m@VGS=10V Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density proces

Datasheet: ME4970A , ME4970A-G , ME4972-G , ME50N02 , ME50N02-G , ME50N10 , ME50N10-G , ME55N06 , AON7408 , ME5602D-G , ME60N03S , ME60N03S-G , ME60N04 , ME60N04-G , ME6600D-G , ME6606D-G , ME6612D-G .

History: G10N10 | 7N65KL-TF2-T | AOC2412 | FIR96N08PG | FTK3615 | F16F60CPM | HGA195N15S

Keywords - ME55N06-G MOSFET datasheet

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