ME55N06-G Specs and Replacement
Type Designator: ME55N06-G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 64 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 597 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
Package: TO252
ME55N06-G substitution
- MOSFET ⓘ Cross-Reference Search
ME55N06-G datasheet
me55n06 me55n06-g.pdf
ME55N06/ ME55N06-G N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME55N06 is the N-Channel logic enhancement mode power RDS(ON) 9.5m @VGS=10V Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density process ... See More ⇒
me55n06a me55n06a-g.pdf
ME55N06A/ ME55N06A-G N-Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME55N06A is the N-Channel logic enhancement mode power RDS(ON) 9.5m @VGS=10V Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density proces... See More ⇒
Detailed specifications: ME4970A, ME4970A-G, ME4972-G, ME50N02, ME50N02-G, ME50N10, ME50N10-G, ME55N06, IRFP250N, ME5602D-G, ME60N03S, ME60N03S-G, ME60N04, ME60N04-G, ME6600D-G, ME6606D-G, ME6612D-G
Keywords - ME55N06-G MOSFET specs
ME55N06-G cross reference
ME55N06-G equivalent finder
ME55N06-G pdf lookup
ME55N06-G substitution
ME55N06-G replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
