All MOSFET. ME5602D-G Datasheet

 

ME5602D-G Datasheet and Replacement


   Type Designator: ME5602D-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 1.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 159 nS
   Cossⓘ - Output Capacitance: 14 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: SOT563
 

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ME5602D-G Datasheet (PDF)

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ME5602D-G

ME5602D-G N-Channel 20V (D-S) MOSFET , ESD Protection N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME5602D is the N-Channel logic enhancement mode power RDS(ON) 0.35 @VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON) 0.45 @VGS=2.5V trench technology. This high density process is especially tailored to RDS(O

Datasheet: ME4970A-G , ME4972-G , ME50N02 , ME50N02-G , ME50N10 , ME50N10-G , ME55N06 , ME55N06-G , IRF9540 , ME60N03S , ME60N03S-G , ME60N04 , ME60N04-G , ME6600D-G , ME6606D-G , ME6612D-G , ME6874 .

History: HY1904D | HM4N150T | EFC6611R-TF | IXFH160N15T | IXTP32N65X | OSG55R108PZF

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