ME5602D-G Specs and Replacement

Type Designator: ME5602D-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 159 nS

Cossⓘ - Output Capacitance: 14 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: SOT563

ME5602D-G substitution

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ME5602D-G datasheet

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ME5602D-G

ME5602D-G N-Channel 20V (D-S) MOSFET , ESD Protection N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME5602D is the N-Channel logic enhancement mode power RDS(ON) 0.35 @VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON) 0.45 @VGS=2.5V trench technology. This high density process is especially tailored to RDS(O... See More ⇒

Detailed specifications: ME4970A-G, ME4972-G, ME50N02, ME50N02-G, ME50N10, ME50N10-G, ME55N06, ME55N06-G, IRF630, ME60N03S, ME60N03S-G, ME60N04, ME60N04-G, ME6600D-G, ME6606D-G, ME6612D-G, ME6874

Keywords - ME5602D-G MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.