All MOSFET. ME5602D-G Datasheet

 

ME5602D-G MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME5602D-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 1.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 159 nS
   Cossⓘ - Output Capacitance: 14 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: SOT563

 ME5602D-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME5602D-G Datasheet (PDF)

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 me5602d-g.pdf

ME5602D-G ME5602D-G

ME5602D-G N-Channel 20V (D-S) MOSFET , ESD Protection N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME5602D is the N-Channel logic enhancement mode power RDS(ON) 0.35 @VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON) 0.45 @VGS=2.5V trench technology. This high density process is especially tailored to RDS(O

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