ME6612D-G Specs and Replacement

Type Designator: ME6612D-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.89 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 14.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 650 nS

Cossⓘ - Output Capacitance: 536 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00265 Ohm

Package: DFN2X3

ME6612D-G substitution

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ME6612D-G datasheet

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ME6612D-G

ME6612D-G Dual N-Channel 12V(S-S) MOSFET GENERAL DESCRIPTION FEATURES The ME6612D-G is the N-Channel logic enhancement mode power RSS(ON) 2.65 m @VGS=4.5V field effect transistors are produced using high cell density, DMOS RSS(ON) 2.75 m @VGS=3.8V trench technology. This high density process is especially tailored to RSS(ON) 3.85 m @VGS=3.1V minimize on-state... See More ⇒

Detailed specifications: ME55N06-G, ME5602D-G, ME60N03S, ME60N03S-G, ME60N04, ME60N04-G, ME6600D-G, ME6606D-G, IRF4905, ME6874, ME6874-G, ME70N03S, ME70N03S-G, ME70N10T, ME70N10T-G, ME7232, ME7232-G

Keywords - ME6612D-G MOSFET specs

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