All MOSFET. ME6612D-G Datasheet

 

ME6612D-G Datasheet and Replacement


   Type Designator: ME6612D-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.89 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 14.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 650 nS
   Cossⓘ - Output Capacitance: 536 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00265 Ohm
   Package: DFN2X3
 

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ME6612D-G Datasheet (PDF)

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ME6612D-G

ME6612D-G Dual N-Channel 12V(S-S) MOSFET GENERAL DESCRIPTION FEATURES The ME6612D-G is the N-Channel logic enhancement mode power RSS(ON) 2.65 m@VGS=4.5Vfield effect transistors are produced using high cell density, DMOS RSS(ON) 2.75 m@VGS=3.8Vtrench technology. This high density process is especially tailored to RSS(ON) 3.85 m@VGS=3.1Vminimize on-state

Datasheet: ME55N06-G , ME5602D-G , ME60N03S , ME60N03S-G , ME60N04 , ME60N04-G , ME6600D-G , ME6606D-G , IRF4905 , ME6874 , ME6874-G , ME70N03S , ME70N03S-G , ME70N10T , ME70N10T-G , ME7232 , ME7232-G .

History: NVF3055-100 | F5020-S | SPU07N60C3

Keywords - ME6612D-G MOSFET datasheet

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