ME6874 Specs and Replacement
Type Designator: ME6874
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.14 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 76 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TSOP6
ME6874 substitution
- MOSFET ⓘ Cross-Reference Search
ME6874 datasheet
me6874 me6874-g.pdf
ME6874/ME6874-G Dual N-Channel 20-V (G-S) MOSFET GENERAL DESCRIPTION FEATURES 20V/6.0A,RDS(ON)=25m @VGS=4.5V The ME6874 is the Dual N-Channel logic enhancement mode power 20V/5.2A,RDS(ON)=32m @VGS=2.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high dens... See More ⇒
Detailed specifications: ME5602D-G, ME60N03S, ME60N03S-G, ME60N04, ME60N04-G, ME6600D-G, ME6606D-G, ME6612D-G, IRLB4132, ME6874-G, ME70N03S, ME70N03S-G, ME70N10T, ME70N10T-G, ME7232, ME7232-G, ME7232S
Keywords - ME6874 MOSFET specs
ME6874 cross reference
ME6874 equivalent finder
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ME6874 substitution
ME6874 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: ME6874-G
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