ME6874 MOSFET. Datasheet pdf. Equivalent
Type Designator: ME6874
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.14 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
|Id|ⓘ - Maximum Drain Current: 5.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 9.5 nC
trⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 76 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TSOP6
ME6874 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME6874 Datasheet (PDF)
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me6874 me6874-g.pdf
me6874 me6874-g.pdf
ME6874/ME6874-G Dual N-Channel 20-V (G-S) MOSFET GENERAL DESCRIPTION FEATURES 20V/6.0A,RDS(ON)=25m@VGS=4.5V The ME6874 is the Dual N-Channel logic enhancement mode power 20V/5.2A,RDS(ON)=32m@VGS=2.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high dens
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