ME7306-G Specs and Replacement

Type Designator: ME7306-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30.8 nS

Cossⓘ - Output Capacitance: 54 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm

Package: DFN3X3

ME7306-G substitution

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ME7306-G datasheet

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ME7306-G

ME7306-G Dual N-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 31m @ VGS =10V The ME7306-G is the Dual N-Channel logic enhancement mode RDS(ON) 45m @ VGS=4.5V power field effect transistor, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailored to ... See More ⇒

Detailed specifications: ME70N03S, ME70N03S-G, ME70N10T, ME70N10T-G, ME7232, ME7232-G, ME7232S, ME7232S-G, 12N60, ME7345-G, ME7356-G, ME7362, ME7362-G, ME7423S-G, ME7442D-G, ME75N03, ME75N03-G

Keywords - ME7306-G MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs