All MOSFET. ME7306-G Datasheet

 

ME7306-G Datasheet and Replacement


   Type Designator: ME7306-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30.8 nS
   Cossⓘ - Output Capacitance: 54 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
   Package: DFN3X3
 

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ME7306-G Datasheet (PDF)

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ME7306-G

ME7306-G Dual N-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)31m@ VGS =10V The ME7306-G is the Dual N-Channel logic enhancement mode RDS(ON)45m@ VGS=4.5V power field effect transistor, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailored to

Datasheet: ME70N03S , ME70N03S-G , ME70N10T , ME70N10T-G , ME7232 , ME7232-G , ME7232S , ME7232S-G , 4N60 , ME7345-G , ME7356-G , ME7362 , ME7362-G , ME7423S-G , ME7442D-G , ME75N03 , ME75N03-G .

History: HUFA76437S3ST | AOI482 | PSMN7R6-60PS | QM12N50F | PHM18NQ15T | LSC70R380GT | FTK60P05S

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